Semiconductor device including a power MISFET

ABSTRACT

In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs  13  (P 1 ) for leading out electrodes on a source region  10 , a drain region  9  and leach-through layers  3  ( 4 ), to which a first layer wirings  11   a   , 11   d  (M 1 ) are connected and, further, backing second layer wirings  12   a  to  12   d  are connected on the conductor plugs  13  (P 1 ) to the first layer wirings  11   s   , 11   d  (M 1 ).

CROSS-REFERENCES

This is a continuation application of U.S. Ser. No. 13/111,001, filedMay 19, 2011, which is a continuation application of U.S. Ser. No.12/609,323, filed Oct. 30, 2009 (now U.S. Pat. No. 7,982,263), which isa continuation of U.S. Ser. No. 11/649,264, filed Jan. 4, 2007 (nowabandoned), which is a continuation application of U.S. Ser. No.10/921,327, filed Aug. 19, 2004 (now U.S. Pat. No. 7,176,523), which isa divisional application of U.S. Ser. No. 09/782,303, filed Feb. 14,2001 (now U.S. Pat. No. 6,797,594), which is a divisional application ofU.S. Ser. No. 09/666,772, filed Sep. 20, 2000 (now U.S. Pat. No.6,528,848) and is related to divisional application U.S. Ser. No.10/187,288, filed Jul. 2, 2002 (now U.S. Pat. No. 6,605,842). The entiredisclosures of all of the above-identified applications are herebyincorporated by reference. This application claims priority to JP11-266668, filed Sep. 21, 1999.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention concerns a semiconductor device used for mobilecommunication apparatus such as cellulars operation in a microwave bandof 500 MHz to 2.5 GHz and, more in particular, it relates to a techniquewhich is effective to high frequency powers amplifier ofpower-amplifying high frequency signals and outputting them.

2. Description of Related Art

In recent years, mobile communication apparatus typically represented bycommunication systems such as GSM (Global System for MobileCommunication), PCS (Personal Communication system), PDC (PersonalDigital Cellular) system and CDMA (Code Division Multiple Access) system(so-called hand set telephone) have been popularized world wide.

Generally, a mobile communication apparatus comprises an antenna foremitting and receiving electromagnetic waves, a high frequency poweramplifier for amplifying high frequency signals under power modulationand supplying them to the antenna, a receiving section for processinghigh frequency signals received on the antenna, a control section forcontrolling them and a battery for supplying a power source voltage tothem.

Such mobile communication apparatus and semiconductor devices used forthe mobile communication apparatus have been disclosed, for example, inthe known literatures described below.

(1) The constitution of the mobile communication apparatus is disclosed,for example, in “HITACHI HYORON” vol. 78, No. 11 (1996-11), pages 21 to26 (Literature 1).

(2) Constitution of a typical high frequency power amplifier on the GSMsystem is described, for example, in ISSCC 98, DIGEST OF TECHNICALPAPERS (Feb. 5, 1998), pages 50 to 55 (Literature 2).

According to the literatures, a threshold voltage of FET is controlledto an appropriate level for stable circuit design and decrease of leakcurrent in an off state. In the constitution of the amplifier, two chipsare arranged in parallel for final stage devices in a 3-stage amplifiercircuit and synthesizing and an impedance-matching circuit is disposedto each of them, for the synthesis of outputs of attain higher outputthan in the case of using one chip. The constitution of this amplifieris referred to as DD-DIMA technique (Divided Device and CollectivelyImpedance Matched Amplifier) in the literature.

(3) Amplifying devices applied to the high frequency power amplifiersare described, for example, in IEDM 97 Technical Digest (1997), pages 51to 54 (Literature 3).

This literature discloses that an amplifier device is constituted with apower insulated gate type field effect transistor (hereinafter simplyreferred to as power MOSFET) using Si (silicon) semiconductors to attainhigh performance.

Specifically, the performance is improved by defining the gate length ofa MOSFET to 0.4 μm. Further, the drain breakdown voltage is set to 20 Vor higher by disposing an offset layer of an about 0.7 μm length on theside of the drain of the power MOSFET. Further, it is important to lowerthe gate resistance for high frequency operation and the gate resistanceis decreased by a structure of short circuiting a metal silicide/siliconlaminated gate electrode with an aluminum wiring (Al-shorted silicongate structure).

(4) There has been a trend of adopting compound semiconductor (GaAs)wafers for making the device efficiency higher. Such a technical trendis described, for example, in NIKKEI ELECTRONICS 1998, 11, 2 (No. 729),pages 238 to 245 (Literature 4). However, as described also in thisliterature, the unit wafer cost in the GaAs technique is more expensivecompared with Si.

For generalized use of the mobile communication apparatus, it has beendemanded for further reduction of the size and weight, and decrease inthe power consumption of the apparatus. For this purpose, it isnecessary to attain further reduction in the size and weight anddecrease in the power consumption for each of components constitutingthe mobile communication apparatus.

One of the components is a high frequency power amplifier for supplyinghigh frequency signals to the antenna. Generally, the high frequencypower amplifier most consumes electric power and it is effective ofsaving the consumption power of the mobile apparatus to decrease theconsumption power of the high frequency power amplifier (improvement ofefficiency).

In the GSM system amplifier using silicon (Si) semiconductors, it wasattained an output voltage of about 3.5 W and a overall efficiency (ηall) of about 50% at a working frequency of 900 MHz and a power sourcevoltage of 3.5 V. The overall efficiency is an efficiency in a highfrequency power amplifier constituted with a three stage power amplifierof power MOSFET (high frequency module).

The performance of the power MOSFET using Si as the output stageamplifier device is about 55% power of a power-added efficiency (η add)at 2 W output based on the DD-CIMA technique, and it was necessary toattain a power added efficiency of 65% or more in power MOSFET in orderto improve the overall efficiency of the amplifier to 55% or more.

The power added efficiency (η add) in the microwave power MOSFET isdefined, for example, in “Optical Microwave Semiconductor AppliedTechnology” Feb. 29, 1996, first edition, first print (Published fromScience Forum Co.), pages 59 to 66 (Literature 5).

Also in the PCS system amplifier, an output voltage of 2 W and anoverall efficiency of 45% at a working frequency of 1900 MHz have beenattained. The performance of the power MOSFET as the output stageamplifier device is about 50% at 1 W output. For improving the overallefficiency of the amplifier to 50% or more, it was necessary to attainthe power-added efficiency of 55% or higher in the power MOSFET.

For improving the power-added efficiency of the amplifier device (powerMOSFET), it is considered to decrease the on-resistance, gate resistanceand parasitic capacitance and improvement of the mutual conductance.

SUMMARY OF THE INVENTION

It is an object of this invention to provide a technique capable ofattaining a high power-added efficiency for a semiconductor deviceapplied to a high frequency amplifier.

A specific object of this invention is to provide a technique capable ofdecreasing the on-resistance of a semiconductor device.

Another specific object of this invention is to provide a technique forimproving the cut-off frequency

A further object of this invention is to provide a semiconductor devicecapable of improving the power-added efficiency in high frequency andhigh power operation, as well as ensuring reliability and massproductivity together.

A still further object of this invention to provide a technique capableof reducing the size and the weight of a high frequency power amplifier.

Typical features of the invention disclosed in this patent applicationare to be explained briefly as below.

One of typical constitution of semiconductor devices according to thisinvention resides in a semiconductor device comprising:

a semiconductor substrate of a first conduction type,

a semiconductor layer of a first conduction type formed on the surfaceof the semiconductor substrate,

a first region and a second region of a second conduction type oppositeto the first conduction type situated to a portion of a main surface ofthe semiconductor layer, being spaced apart from each other on bothsides of a region to be formed with a channel, the second regioncomprising a low impurity concentration region in contact with theregion to be formed with the channel and a high impurity concentrationregion in contact with the low impurity concentration region,

a gate electrode formed by way of a gate insulation film above thechannel region,

a leach-through layer of a first conduction type formed to other portionof the main surface of the semiconductor layer so as to be in contactwith the first region and the semiconductor substrate,

a first insulation film covering the gate electrode, the first region,the second region and the leach-through layer,

a first conductor plug, a second conductor plug and a third conductorplug connected, respectively, with the first region, the high impurityconcentration region of the second region and the leach-through layer byway of openings disposed in the first insulation film,

a first conductor layer connected with the first conductor plug and thethird conductor plug and a second conductor layer connected with thesecond conductor plug, and

a third conductor layer connected with a lower surface of thesemiconductor substrate.

According to the technical means described above, since conductor plugsare used for leading out electrodes for the first region (source), thehigh impurity concentration region of the second region (drain) and theleach-through layer (source punch-through layer), the first and thesecond conductor layers (first layer wiring M1) constitute an electrodepattern having a flat surface. Therefore, this can increase the degreeof freedom for the arrangement of a backing wiring layer (second layerwiring M2) and M1•M2 contact for realizing the wiring of loweredresistance to the first and second conductor layers.

Accordingly, the wiring resistance to the first region, the highimpurity concentration region of the second region and the leach-throughlayer can be decreased. As a result, since the on-resistance can bedecreased, this can contribute to the improvement for the power-addedefficiency in the semiconductor device.

Another typical constitution for the semiconductor device of thisinvention is an insulated gate field effect semiconductor device havinga P type semiconductor region and a drain offset region in contact withthe P type semiconductor region, in which a gate electrode in contactwith a gate insulation film is constituted with a P type semiconductor,and an N type layer is disposed on the surface of the P typesemiconductor region.

By the constitution described above, since the gate electrode isconstituted with a P type semiconductor, namely, constituted as a P typegate, a threshold voltage Vth is increased by 1 V in view of thedifference of the work function. Therefore, a state of normally off,that is, an enhanced state can be maintained in a state of not giving agate voltage irrespective of the disposition of the N type layer on thesurface of the P type semiconductor region. Presence of the N type layerprovides an effect of extending the extension of a depletion layer forthe drain junction to improve the drain breakdown voltage. Then, when aP type gate device (P type gate MOSFET) having an identical aimed valuefor the drain breakdown voltage like that in the N type gate (P typegate power MOSFET) is designed, the impurity concentration in the drainoffset region can be increased. This is because there is no morenecessary to extend the depletion layer on the side of the drain offsetregion. Possibility of increasing the impurity concentration in theoffset region means that the resistance in the drain offset region canbe lowered compared with the N type gate device.

Further, presence of the N type layer can moderate the electric field onthe surface of the channel region. Accordingly, the carrier mobility ofthe channel region can be improved. Improvement of the carrier mobilitycan be considered as a result of decreasing the resistive component inthe relevant portion.

Further, improvement of the carrier mobility based on the constitutiondescribed above enables to shorten the gate length Lg and supply moreelectric current. Usually, as the gate length is shorter, carriervelocity is saturated remarkably making it difficult to supply a greatamount of current.

As the result, when the on-resistance is compared between the P typegate device and the N type gate device under an identical breakdownvoltage, it is possible to effectively decrease the resistance in the Ptype gate device than in the N type gate device. That is, P type gatepower MOSFET can improve the power-added efficiency.

BRIEF DESCRIPTION OF THE DRAWINGS

Other objects and advantages of the invention will become apparentduring the following discussion of the accompanying drawings, wherein:

FIG. 1 is a cross sectional view of a semiconductor device (N gate•Nchannel type Si power MOSFET) as Embodiment 1 according to thisinvention;

FIG. 2 is a plan view of a semiconductor device as Embodiment 1according to this invention;

FIG. 3 is a plan view illustrating a layout of a semiconductor device(semiconductor chip) as Embodiment 1 according to this invention;

FIG. 4 is an enlarged fragmentary plan view for a portion of aprotection device 19 in the semiconductor device (semiconductor chip)shown in FIG. 3;

FIG. 5 is a cross sectional view taken along line D-D′ for theprotection device shown in FIG. 4;

FIG. 6 is across sectional view for a main portion during manufacturingsteps of a semiconductor device as Embodiment 1 according to thisinvention;

FIG. 7 is a cross sectional view for a main portion during manufacturingsteps for the semiconductor device succeeding to FIG. 6;

FIG. 8 is a cross sectional view for a main portion during manufacturingsteps for the semiconductor device succeeding to FIG. 7;

FIG. 9 is a cross sectional view for a main portion during manufacturingsteps for the semiconductor device succeeding to FIG. 8;

FIG. 10 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 9;

FIG. 11 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 10;

FIG. 12 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 11;

FIG. 13 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 12;

FIG. 14 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 13;

FIG. 15 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 14;

FIG. 16 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 15;

FIG. 17 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 16;

FIG. 18 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 17;

FIG. 19 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 18;

FIG. 20 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 19;

FIG. 21 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 20;

FIG. 22 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 21;

FIG. 23 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 22;

FIG. 24 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 23;

FIG. 25 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 24;

FIG. 26 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 25;

FIG. 27 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 26;

FIG. 28 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 27;

FIG. 29 is a cross sectional view for a main portion duringmanufacturing steps for the semiconductor device succeeding to FIG. 28;

FIG. 30 is an equivalent circuit diagram for a semiconductor device asEmbodiment 1 according to this invention;

FIG. 31 is a characteristic diagram illustrating a relation between thegate oxide thickness, and the on-resistance and the gate breakdownvoltage in the semiconductor device as Embodiment 1 according to thisinvention;

FIG. 32 is a characteristic diagram illustrating a relation between thegate length and the on-resistance in the semiconductor device asEmbodiment 1 according to this invention;

FIG. 33 is a characteristic diagram illustrating a relation between thegate length and the mutual conductance in the semiconductor device asEmbodiment 1 according to this invention;

FIG. 34 is a characteristic diagram illustrating a relation between thegate length and the threshold voltage in the semiconductor device asEmbodiment 1 according to this invention;

FIG. 35 is a characteristic diagram illustrating a relation between theoffset layer depth and the on-resistance in the semiconductor device asEmbodiment 1 according to this invention;

FIG. 36 is a characteristic diagram illustrating a relation between theoffset length and the on-resistance in the semiconductor device asEmbodiment 1 according to this invention;

FIG. 37 is a characteristic diagram illustrating a relation between theoffset length and the drain breakdown voltage in the semiconductordevice as Embodiment 1 according to this invention;

FIG. 38 is a characteristic diagram illustrating a relation between theposition of the punch-through stopper layer and the on-resistance in thesemiconductor device as Embodiment 1 according to this invention;

FIG. 39 is a characteristic diagram illustrating a relation between theposition of the punch-through stopper layer and the drain breakdownvoltage in the semiconductor device as Embodiment 1 according to thisinvention;

FIG. 40 is a chart for the distribution concentration of impurities in aportion taken along line B-B′ in the semiconductor device shown in FIG.1;

FIG. 41 is a characteristic diagram illustrating the dependence of thesubstrate punch-through layer on the resistivity in the epitaxy layerthickness of the semiconductor device as Embodiment 1 according to thisinvention;

FIG. 42 is a chart for the distribution of concentration of impuritiesin a portion taken along line C-C′ in the semiconductor device shown inFIG. 1;

FIG. 43 is a characteristic diagram illustrating a relation between theepitaxy layer thickness and the breakdown voltage in the semiconductordevice as Embodiment 1 according to this invention;

FIG. 44 is a current-voltage characteristic diagram in the semiconductordevice as Embodiment 1 according to this invention;

FIG. 45 is a plan view illustrating a contact portion for drain wiringsin the existent technique;

FIG. 46 is a plan view illustrating a contact portion for drain wiringsin the semiconductor device as Embodiment 1 according to this invention;

FIG. 47 shows RF characteristics of the semiconductor device asEmbodiment 1 according to this invention;

FIG. 48 shows RF characteristics (gate width Wg dependence) of thesemiconductor device as Embodiment 1 according to this invention;

FIG. 49 is an equivalent circuit diagram for an RF power module usingthe semiconductor device as Embodiment 1 according to this invention;

FIG. 50 is a plan view illustrating a layout of an RF power module usingthe semiconductor device as Embodiment 1 according to this invention;

FIG. 51 is a cross sectional view of a semiconductor device asEmbodiment 2 according to this invention;

FIG. 52 is a characteristic diagram illustrating the voltage dependenceof the drain-gate capacitance of the semiconductor device as Embodiment2 according to this invention;

FIG. 53 is a characteristic diagram illustrating a relation between thesignal gain and the frequency of the semiconductor device as Embodiment2 according to this invention;

FIG. 54 is a cross sectional view for a main portion duringmanufacturing steps of the semiconductor device as Embodiment 2according to this invention;

FIG. 55 is a cross sectional view for a main portion duringmanufacturing steps of the semiconductor device succeeding to FIG. 54;

FIG. 56 is a cross sectional view for a main portion of a completedsemiconductor device as Embodiment 2 according to this invention;

FIG. 57 is a cross sectional view for a main portion duringmanufacturing steps of the semiconductor device as Embodiment 3according to this invention;

FIG. 58 is a cross sectional view for a main portion duringmanufacturing steps of the semiconductor device succeeding to FIG. 57;

FIG. 59 is a cross sectional view for a main portion duringmanufacturing steps of the semiconductor device succeeding to FIG. 58;

FIG. 60 is a cross sectional view for a main portion of a completedsemiconductor device as Embodiment 3 according to this invention;

FIG. 61 is a cross sectional view for a main portion of a semiconductordevice as Embodiment 4 according to this invention;

FIG. 62 is a cross sectional view for a main portion of a semiconductordevice as Embodiment 5 according to this invention;

FIG. 63 illustrates a relation between the impurity concentration at thesurface of the offset layer and the degradation of the on-resistance inthe semiconductor device as Embodiment 5 according to this invention;

FIG. 64 is a cross sectional view for a main portion of a semiconductordevice as Embodiment 6 according to this invention;

FIG. 65 is a cross sectional view for a main portion of a semiconductordevice as Embodiment 7 according to this invention;

FIG. 66 is a plan view for a main portion of a semiconductor device asEmbodiment 7 according to this invention;

FIG. 67 is a plan view for a main portion of a semiconductor device asEmbodiment 8 according to this invention;

FIG. 68 is a plan view for a main portion of a semiconductor device asEmbodiment 9 according to this invention;

FIG. 69 is a cross sectional view for a main portion of a semiconductordevice as Embodiment 10 according to this invention;

FIG. 70 is a plan view for a main portion of a semiconductor device asEmbodiment 10 according to this invention;

FIG. 71 is a plan view for a protection device in a semiconductor device(semiconductor chip) as Embodiment 11 according to this invention;

FIG. 72 is a cross sectional view for a portion taken along line D-D′ ofthe protection device shown in FIG. 71;

FIG. 73 is a plan view illustrating a layout of a semiconductor device(semiconductor chip) as Embodiment 12 according to this invention;

FIG. 74 is a plan view illustrating a layout of a semiconductor device(semiconductor chip) as Embodiment 13 according to this invention;

FIG. 75 is a plan view illustrating a layout of a semiconductor device(semiconductor chip) as Embodiment 14 according to this invention;

FIG. 76 is a cross sectional view for a main portion of a semiconductordevice (P gate•N type channel type Si power MOSFET) as Embodiment 15according to this invention;

FIG. 77 is a cross sectional view for a main portion illustratingextension of a depletion layer in the semiconductor device (P gate•typechannel type Si power MOSFET) as Embodiment 15 according to thisinvention;

FIG. 78 is a cross sectional view for a main portion duringmanufacturing steps of the semiconductor device as Embodiment 15according to this invention;

FIG. 79 is a cross sectional view for a main portion in manufacturingsteps of the semiconductor device as Embodiment 16 according to thisinvention;

FIG. 80 is a cross sectional view for a main portion duringmanufacturing steps of the semiconductor device succeeding to FIG. 79;

FIG. 81 is a cross sectional view for a main portion of a completedsemiconductor device as Embodiment 16 according to this invention;

FIG. 82 is a distribution chart for the impurity concentration in aportion taken along line G-G′ in FIG. 76; and

FIG. 83 is plan view of a semiconductor device in which the number ofgates is increased in Embodiment 1 according to this invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

This invention is to be explained in details by way of preferredembodiments with reference to the drawings. In the drawings forexplaining the preferred embodiments, those having identical functionscarry the same reference numerals for which duplicate explanations areto be omitted.

Preferred embodiments of the present invention will be described indetail based on the followings, wherein

Embodiment 1

Embodiment 1 of this invention is to be explained with reference to FIG.1 through FIG. 5.

FIG. 1 is a cross sectional view of a semiconductor device (N gate•Nchannel type Si power MOSFET) as Embodiment 1 according to thisinvention; FIG. 2 is a plan view of a semiconductor device as Embodiment1 according to this invention; FIG. 3 is a plan view illustrating alayout of a semiconductor device (semiconductor chip) as Embodiment 1according to this invention; FIG. 4 is an enlarged fragmentary plan viewfor a portion of a protection device 19 in the semiconductor device(semiconductor chip) shown in FIG. 3; and FIG. 5 is a cross sectionalview taken along line D-D′ for the protection device shown in FIG. 4.

<Cross Sectional Structure of a Basic Cell>

A semiconductor device (basic cell of MOSFET) as Embodiment 1 accordingto this invention shown in FIG. 1 has the following constitution.

A P type high resistance Si epitaxy layer (first conduction typesemiconductor layer) 2 is formed on the upper surface of a P type lowresistance Si substrate (first conduction type semiconductor layer) 1.The specific resistivity of the substrate is restricted to 0.02 Ωcm orless with an aim of reducing the on-resistance. It has been alsodisclosed in the existent technique that the specific resistivity of thesilicon substrate applied to power MOSFET is reduced to 0.02 Ωcm as inJapanese Published Unexamined Patent Application Hei 6-97447. Thespecific resistivity of the silicon substrate applied to Embodiment 1 is0.01 Ωcm.

Recently, an epitaxial wafer is applied also in CMOSIC in which thespecific resistivity of the substrate is about 10 Ωcm which is smallerby about three digits compared with the specific resistivity of thesubstrate in IC. The epitaxy layer has a specific resistivity of 20 Ωcmand a thickness of 3 μm. In the epitaxy layer in the patent literaturedescribed above, the thickness is 5 μm and the thickness is furtherdecreased by 2 μm with an aim of reducing the on-resistance.

A P type well region 5 (PW) is formed selectively as a region formedwith a channel to a portion of the main surface of the epitaxy layer 2.The P type well region is intended as a punch-through stopper forsuppressing the extension of a depletion layer extending from a drain toa source. Then, a gate electrode 7 is formed by way of a gate insulationfilm (gate oxide film) 6 on the surface of the P type well region 5(PW).

An N type source region (first region) 10 having a high impurityconcentration and an N type drain offset region (third region) 8 (NM)having a low impurity concentration are formed in the epitaxy layer 2 ata position spaced apart from each other while being in contact with theP type well region 5 (punch-through stopper layer PW). The N type sourceregion 10 and the N type drain offset region 8 (NM) are self aligned tothe gate electrode 7 and a portion thereof overlaps with the gateelectrode 7.

The N (high resistance) region 8 situated below the N type source region10 is not particularly necessary. This N type (high resistance) region 8is formed by self alignment to the gate electrode 7 when impurities areintroduced for forming the N type drain offset region 8 (NM).

An N type drain region (second region) 9 having a high impurityconcentration for leading out an electrode is formed in contact with thedrain offset region 8.

A P type source punch-through layer (leach-through layer) 3 having ahigh impurity concentration (low resistance) is disposed in the epitaxylayer 2 in contact with the N type source region 10 and extends from themain surface to the substrate 1. A P type low resistance region 4 forcontact is formed on the surface of the leach-through layer 3. The Ntype source region 10 is electrically connected by way of a metal plug,a first layer wiring, a metal plug and the leach-through layer 3 to asource rearface electrode S1.

In FIG. 1, a portion between A-A′ constitutes a basic cell and the pitchis about 6 μm. The gate length Lg of the gate electrode 7 is 0.3 μm andthe length of the drain offset region 8 disposed for the purpose ofensuring drain breakdown voltage by electric field moderation, that is,the drain offset length (Lr) is 0.7 μm. The gate oxide thickness is 11nm, which is determined in view of the improvement intensity of theon-resistance and the allowable electric field for the oxide film. Thisis to be explained specifically later.

A first insulation film (interlayer insulation film) 20 is formed so asto cover the gate electrode 7, the N type source region 10, the N typedrain offset region 8 (NM), the N type drain (low resistance) region 9and the P type source punch-through layer 3. A plurality of openings areformed in the first insulation film 20 and each of the openings hastherein a conductor plug P1 for leading out the electrode to be incontact with the N type source region 10, the N type drain region 9 andthe P type source punch-through layer 3, respectively. The conductorplug P1 is made of tungsten and buried in the opening. The surface ofthe plug is substantially in flush with the surface of the firstinsulation film 20.

On the surface of the first insulation film 20 are formed by patterninga first conductor layer 11 s for electrically connecting the conductorplug connected with the N type source region 10 and the conductor plugin contact with the p-source punch-through layer 3, and a secondconductor layer 11 d connected with the conductor plug P1 in contactwith the N type drain region 9, respectively, as a first layer wiring(M1).

A second insulation film (interlayer insulation film) 30 is formed so asto cover the first and the second conductor layers 11 s and 11 d. Then,openings are formed in the second insulation film being situated on theconductor plug in contact with the P type source punch-through region 3and the conductor plug P1 in contact with the N type drain region 9,respectively. Wirings 12 s, 12 d (second layer wirings M2) as thebacking wirings for reducing the resistance of the wirings are connectedby way of the openings to the first and the second conductor layers 11 sand 11 d, respectively.

The source rearface electrode S(2) is connected to a first referencepotential, for example, a ground potential, whereas the drain electrode12 d is connected to a second reference potential higher than the firstreference potential, for example, a power source (Vdd=3.6 V) potential.

<Layout for Unit Block>

Relation between the first layer wirings and the second layer wirings inthis Embodiment 1 is to be explained in details with reference to FIG.2.

In FIG. 2, 11 represents a conductor layer for the first layer (firstlayer wiring M1) and 12 represents a conductor layer for the secondlayer (second layer wiring M1). 13 represents contact portions ofconductor plugs (metal plugs) relative to the semiconductor regions suchas the N type source region 10, the N type drain region 9 and the P typesource punch-through layer 3 as described above, and 14 representscontact portions of the second layer wirings M2 relative to the firstlayer wirings M1. 21 shows a boundary line for a device isolation region(field oxide film). That is, the portion surrounded with the line 21 isa device forming region. 22 represents a bonding pad for the drainelectrode (drain pad) and 23 represents a bonding pad for the gateelectrode (gate pad). The drain and gate pads 22 and 23 show one blockand several blocks are arranged in parallel in an actual chip inaccordance with a required gate width. This will be explained later withreference to FIG. 3.

FIG. 2 shows a case of two gate electrodes 7 in which the drain regionis put between the gate electrodes 7 and source regions are formed onboth sides. A portion between A-A′ constitutes a basic cell shown inFIG. 1 and several tens of them are arranged repeatedly into one blockin an actual chip. The drain is extended to the pad 22 by the secondlayer wiring without traversing the gate electrode 7 but in paralleltherewith. Further, also the source is backed by the second layer wiringwithout traversing the gate electrode 7 but in parallel therewith. Thegate is extended on every predetermined length from the gate electrode 7by the first layer wiring and is connected from the periphery in commonto the pad part 23 through the second layer wiring. In Embodiment 1, thepredetermined length for leading out the gate electrode is about 40 μm.Further, since the wiring is led out perpendicular to the gateelectrode, a parasitic capacitance between the second layer wiring forthe drain and the first layer wiring for the gate is reduced. That is,the stripe-like gate electrode 7 is extended at a predetermined distanceof about 40 μm through the first layer wiring 11 in the directionperpendicular to the drain wiring and the gate electrode. They areconnected in common on both ends of the block to the gate pad 23 throughthe second layer wiring 12. This can reduce the parasitic capacitancebetween the drain wiring and the gate wiring compared with the case ofparallel extension.

Further, an extension 12E of the second metal conductor layer for thesource is disposed in the vicinity of the drain pad 22, otherpenetration layer having the same constitution as the penetration layerdescribed above is disposed in the epitaxy layer being positioned belowthe extension 12E, and the extension 12E is electrically connected tothe penetration layer.

It is to be noted that the conductor plug is adopted as the electrodeleading conductor in Embodiment 1, in which the opening for contact withthe second layer wiring to the first layer wiring M1 (contact portion)is situated above the electrode leading opening.

That is, as shown in FIG. 2, the contact 13 between the first layerwiring and the low resistance layer of the drain region and the contact14 for the first layer and the second layer wirings are formed on oneidentical axis. The difference between this structure and the existenttechnique is to be explained below with reference to FIG. 45 and FIG.46.

FIG. 45 is a plan view showing a contact portion for drain wiring in theexistent technique. On the other hand, FIG. 46 is a plan view showing acontact portion for the drain wiring in the semiconductor device ofEmbodiment 1. The existent technique referred to herein adopts a usualtwo layered wiring technique attempted by the present inventors, et al.

In the existent technique shown in FIG. 45, the first layer wiring 11(M1) was directly connected to the drain region as the electrode leadingelectrode (wiring) by way of the contact portion (opening) 13 disposedto the first interlayer insulation film. Then, connection of the secondlayer wiring 12 (M2) for backing the first layer wiring 11 (M1) isconducted through the contact portion 14 disposed to the secondinterlayer insulation film so as not to overlap the contact portion 13.If the contact portion 14 is laid over the contact portion 13 in thelayout, an indent is formed to the first layer wiring 11 in the contactportion 13. Therefore, etching residue is present in the contact portion14 when the contact portion 14 is formed by photolithography. Thus,contact between the first layer wiring 11 and the second layer wiring 12can not be formed reliably to result in increase in the contactresistance. Therefore, there is a problem that the effect of the backingwiring can not be obtained fully. Accordingly, it was necessary todisplace the contact portion 14 and the contact portion 13 from eachother in the layout.

On the other hand, in Embodiment 1, since the wiring is applied afterburying the contact portion for leading out the electrode with theconductor plug (metal plug), the step is eliminated. Accordingly, asshown in FIG. 46, the contact portions 13 and 14 can be situated on oneidentical axis to provide advantages such as improvement for the degreeof freedom in the layout, improvement in the current capacity of thecontact and reduction of the resistance between the contact and thewiring. That is, the wiring resistance can be reduced in each of the Ntype source (low resistance) region 10, the N type drain (lowresistance) region 9 and the P type source punch-through region 3respectively. As a result, since the on-resistance can be reduced, highpower-added efficiency can be attached to the semiconductor device.

It has been well-known to adopt the metal plug technique, for example,in CMOS transistors. Such technique is disclosed, for example, inJapanese Published Unexamined Patent Application Hei 6-350042. Althoughnot described in the patent literature, the metal plug technique usuallyaims at the countermeasure for the step disconnection upon forming theupper layer wiring pattern. Particularly, the metal plug technique isapplied to the electrode leading considering the case that the firstlayer wiring or the second layer wiring traverses the gate electrode(wiring).

However, according to Embodiment 1, the metal plug is applied in a statewhere the gate electrode and the second layer wiring (M2) for the draindo not cross to each other. That is, Embodiment 1 is based on theconcept quite different from the application of the known metal plugtechnique.

FIG. 2 shows the case of using two gate electrodes 7. In a case of fourgate electrodes 7, it adopts a layout structure of disposing them in180° symmetry with respect to axis Z-Z′ as the center as shown in FIG.83. The gate electrodes 7 are disposed by an even number so as tosandwich respective drain electrodes (drain region), while taking thebalance of the drain current into consideration.

<Chip Layout>

FIG. 3 shows the layout for the chip in this Embodiment 1. The layoutfor the unit block shown in FIG. 3 has the constitution as previouslyexplained with reference to FIG. 2.

Power MOSFET arranged in the chip shown in FIG. 3 comprises a pluralityof unit blocks connected in parallel.

That is, in the insulated gate semiconductor device of this embodimenthaving a plurality of channel regions, a drain region and a sourceregion disposed on both sides of each of the channel regions and aconductor layer for the gate electrode disposed to the surface of eachof the channel regions by way of a gate insulation film to a mainsurface of a semiconductor chip having a semiconductor layer, andincluding insulated type field effect transistors as a unit block,wherein a metal plug is connected with the main surface of each of thedrain regions and each of the source regions, a first metal conductorlayer is connected with each of metal plugs, an interlayer insulationfilm is covered on the first metal conductor layer, a second metalconductor layer for the drain is connected in common with each of thefirst metal conductor layers for the drain of the first metal conductorlayers through drain connecting openings disposed to the interlayerinsulation film being situated on the metal plug connected with thedrain region, a second metal conductor layer for the source is connectedin common with each of the first metal conductor layers for the sourceof the first metal conductor layers through source connecting openingsdisposed to the interlayer insulation film, a second metal conductorlayer for the gate is connected in common with each of the first metalconductor layers for the gate of the first metal conductor layersthrough gate connecting openings disposed to the interlayer insulationfilm, the second metal conductor layer for the drain having a drainbonding pad 22 and the second metal conductor layer for the gate has agate bonding pad 23, and wherein the insulated gate type field effecttransistors of the unit block are disposed in plurality to the mainsurface of the semiconductor chip.

As shown in FIG. 3, a plurality of drain pads 22 are disposed along oneside of a chip, and gate pads 24 and source pads 20 are disposed alongother side of the chip. Among them, the source pad (source pad forprobing) 24 is not used actually but mainly used only for checking thedevice operation. That is, the source pad 24 is disposed forfacilitating the check of the operation of the power MOSFET in the stateof a wafer not divided into each of the chips. Upon operation check, thecharacteristics of each of the chips (MOSFET) can be inspected bybringing a inspection probe (probe) into contact with each of the pads22, 23 and 24 disposed on the upper surface of the substrate.

Protection diodes 19 for preventing electrostatic destruction of thegate insulation film are disposed to the gate pads arranged on both endsof the chip. The gate protection diode is to be explained below.

<Gate Protection Diode>

FIG. 4 and FIG. 5 show the constitution of a gate protection diode. FIG.4 is an enlarged plan view for a portion of the gate protection diode 19shown in FIG. 3. FIG. 5 is a cross sectional view taken along line D-D′in FIG. 4.

In FIG. 4 (FIG. 5), 21 represents a thick field oxide film. A gate pad23 disposed on the field oxide film 21 is integrally formed bypatterning with a second layer wiring 12 (M2). Then, the gate pad 23 isconnected with a P type low resistance region 4 by way of the firstlayer wiring 11 (M1). A diode of a PNP structure (back-to-back diode) isconstituted with a P type low resistance region 4 b formed into, acircular shape so as to surround the P type low resistance region 4, anN type high resistance region 8 and a P type low resistance region 4 a.The breakdown voltage of the PNP structure is designed to about ±5˜9 Vto clamp and absorb a surge voltage on the gate pad. The P type lowresistance regions 4 a and 4 b are formed by an identical process withthat for the P type low resistance region 4 for the contact shown inFIG. 1.

A metal plug P1 is adopted also in this gate protection diode. Twostripe-shaped metal plugs P1 are connected with the P type region 8 (4)and function such that current flows uniformly.

<Process>

The method of manufacturing the silicon power MOSFET as Embodiment 1will be explained below with reference to FIG. 6 to FIG. 29.

In each of FIG. 6 to FIG. 9, FIG. 14, FIG. 20, FIG. 23 and FIG. 29, thecross sectional view shown in (a) illustrates a cross section takenalong line X-X′ in FIG. 2 and the cross sectional view shown in (b)illustrates a cross section along line Y-Y′ in FIG. 2.

(1) Ion Implantation Step for Forming (P Type Punch-Through Layer):

As shown in FIGS. 6( a) and (b), a semiconductor wafer in which a P typesemiconductor layer 2 is formed to the main surface of a semiconductorsubstrate 1 comprising Si of a first conduction type (specifically Ptype) is provided. The P type semiconductor layer 2 was formed by aknown epitaxial growing method. The P type semiconductor layer ishereinafter referred to as the P type epitaxy layer.

As described above, the specific resistivity of the semiconductorsubstrate 1 is 0.01 Ωcm. On the other hand, the specific resistivity ofthe P type epitaxy layer 2 is 20 Ωcm, which is higher than the specificresistivity of the substrate. The thickness for the epitaxy layer 2 isset within a range from 2.5 to 3.5 μm while taking the reduction of theon-resistance and the drain breakdown voltage into consideration. Inthis embodiment, the thickness of the epitaxy layer 2 was set to 3 μm.

Successively, a silicon oxide (SiO₂) film 100 of 10 nm thickness isformed on the surface of the epitaxy layer 2. Then, for forming an ionimplantation mask for forming a P type punch-through layer, aphotoresist pattern (mask) PR1 is formed on the SiO₂ film 100 by usingphotolithography.

Successively, the silicon oxide film 100 and the surface of the epitaxylayer 2 are removed by etching using the mask PR1. The surface of theepitaxy layer 2 is etched to a thickness of about 50 nm. Then, a stepdifference is formed to the surface of the epitaxy layer 2. This stepdifference can be used as a target for mask alignment.

Subsequently, for forming a P type punch-through layer 3, impuritiesshowing the first conduction type (P type) are introduced by an ionimplantation into the epitaxy layer 2 not formed with the mask PR1. Thatis, boron (B⁺) as P type impurity is, for example, ion implantedselectively to a deep portion of the epitaxy layer 2 under the conditionwith an acceleration energy of 80 KeV and at a dose of 1.5×10¹⁶/cm².

(2) Field Oxide Film Forming Step:

The mask PR1 and the silicon oxide film 100 shown in FIG. 6 are removed.Then, a field oxide film 21 is formed selectively by LOCOS (LocalOxidation of Silicon) technique for defining unit blocks of MOSFET.

At first, as shown in FIGS. 7 (a) and (b), a silicon oxide film 100 a isformed by thermal oxidation as a pad oxide film to the surface of theepitaxy layer. This pad oxide film prevents direct contact of aninsulation film comprising a silicon nitride film (oxidation resistantinsulation film) as an oxidation resistant mask to be formedsuccessively with silicon surface. If the silicon nitride film directlycovers the silicon surface, thermal strain remains on the surface tocause crystal defects. That is, the pad oxide film is formed as a bufferfilm for preventing crystal effects.

Successively, a silicon nitride film 101 as an oxidation resistant maskis formed. Then, the silicon nitride film 101 is patterned by usingphotolithography.

Then, using the remained silicon nitride film 101 as a mask, the surfaceof the epitaxy layer not formed with the silicon nitride film 101 isthermally oxidized to selectively form a field oxide film (LOCOS oxidefilm) 21 to 350 nm thickness.

It is important that the thermal oxidation (heat treatment) in this stepis conducted under the treating condition at 1050° C. to 1100° C. forabout 30 min and accompanied by extending diffusion of ion implanted Ptype impurities. Accordingly, a P type punch-through layer (P⁺) 3extending to the semiconductor substrate 1 is formed in the epitaxylayer 2 in this step. That is, heat treatment for forming the P typepunch-through layer 3 and for forming the field oxide film 21 areapplied not independently and separately but the heat treatment forforming them is conducted at once. That is, the heat treatment(annealing) step for forming the P type punch-through layer 3 can besaved.

Further, since this heat treatment step is saved, auto-doping of theboron impurity in the semiconductor substrate 1 into the epitaxy layercan be suppressed. This suppression of the auto-doping of the impuritycan lower the concentration of the impurities from the P well (PW) 5 tobe described later, to provide an effect of reducing the on-resistance.

The silicon nitride film 101 and the pad oxide film 100 a are removed toeliminate defects present on the surface of the epitaxy layer 2.Successively, a silicon oxide film (100 b) is formed by thermaloxidation on the surface of the epitaxy layer 2.

Then, the field oxide film 21 is annealed at a heat treatmenttemperature of about 1050° C. which is higher than the temperature forforming the silicon oxide film (100 b). This annealing is applied withan aim of reducing crystal defects remaining on the surface of an activeregion in which MOSFET is formed and ensuring the breakdown voltage ofthe gate oxide film by decreasing the thickness of the gate oxide film,which is an important method for obtaining the power MOSFET of thisEmbodiment 1.

(3) First Impurity Introduction Step for Forming P Type Well Region:

As shown in FIGS. 8( a) and (b), a photoresist pattern (mask) PR2 isformed so as to cover a drain forming region.

Successively, impurities showing the first conduction type areintroduced selectively to the surface of the epitaxy layer 2 that is notformed with the mask PR2. For example, boron as the P type impurity isselectively introduced into the epitaxy layer 2 by ion implantation withan energy of passing through the field oxide film 21. That is, boron isintroduced such that the distribution of the impurity concentrationafter the annealing treatment substantially forms a peak on the surfaceof the epitaxy layer 2 in contact with the field oxide film 21. Thisforms a P type high impurity concentration region as a channel stopperon the surface of the epitaxy layer 2. The ion implantation is conductedunder the conditions are with an acceleration energy of 200 KeV and at adose of 2.0×10¹³/cm².

(4) Second Impurity Introduction Step for Forming P Type Well Region:

Succeeding to the first impurity introduction step, impurities showingthe first conduction type are selectively introduced into the epitaxylayer 2 in a state of leaving the mask PR2 as shown in FIG. 9 (a), (b).For example, boron like that in the first impurity introduction stepdescribed above, impurities show the first conduction type areintroduced selectively into the epitaxy layer 2 by ion implantation. Theion implantation is conducted under the conditions with an accelerationenergy of 50 KeV and at a dose of 1.0×10¹³/cm².

By conducting ion implantation twice stepwise as in the first and secondimpurity introduction steps, the impurity concentration distribution inthe well along the direction of the depth can be made uniform, enablingto save the heat treatment (high temperature annealing) for extendingdispersion. The order for the first and the second impurity introductionsteps may be reversed.

(5) Ion Implantation Step for Controlling Threshold Voltage:

Although not illustrated in the drawings, after removing the mask PR2shown in FIG. 9, impurities are introduced for controlling the thresholdvoltage (Vth). For example, BF₂ ions are ion implanted to the surface ofthe epitaxy layer 2 under the conditions with an acceleration energy of50 KeV and at a dose of 1.0×10¹²/cm². Successively, after cleaning thesurface of the epitaxy layer 2, the impurities implanted in the steps(3) and (4) are subjected to extending diffusion by the annealingtreatment (950° C. for 60 sec) to form a P type well region(punch-through stopper layer) 5 as the channel forming region of MOSFET.

(6) Gate Insulation Film Forming Step:

The silicon oxide film 100 b undergoing damages by ion implantation(FIG. 9) was removed to expose the surface. Then, a gate oxide film 6 ata thickness of 10 nm or more and 12 nm or less is formed to the exposedsurface of the P type well region 5 by thermal oxidation (refer to FIG.10). According to Embodiment 1, the thickness of the gate oxide film 6is set at 11±0.5 nm.

For the gate oxide film 6, a silicon oxide film containing nitrogen, sso-called oxynitride film may be applied instead of the thermallyoxidized film. In this case, traps for hot electrons on the boundary ofthe gate insulation film are reduced to thereby enabling to take acountermeasure for hot carriers. That is, the oxynitride film canterminate the traps on the film boundary by bonding nitrogen (N).

Further, for the gate oxide film 6, a laminate gate insulation filmcomprising an SiO₂ film (4 nm thickness) by thermal oxidation and anSiO₂ film (7 nm thickness) of thickness greater than the SiO₂ filmlaminated thereon may be applied. For the SiO₂ film by a CVD process, anHLD (High Temperature Low Pressure Decomposition) film is actually used.The HLD film is made of TEOS (tetraethyl orthosilicate) material as anorganic source, which is excellent in the uniform film thickness andeffective for preventing diffusion of impurities into the film. Use ofsuch a gate insulation film is useful, particularly, for the embodimentof a P gate N channel type Si power MOSFET to be described later. In thecase of the P type gate electrode, denseness of the gate oxide film isimpaired by the leakage of boron (impurity) contained in the electrode.Therefore, leakage of boron can be inhibited by the application of thelaminated gate insulation film to prevent degradation of voltagebreakdown of the gate insulation film.

(7) Conductor Layer Forming Step for Gate Electrode:

Successively, as shown in FIG. 10, the surface of the gate oxide film 6is covered with a polycrystal silicon layer containing phosphorusimpurities at about 100 nm thickness (doped poly-silicon) 7 a by a CVDprocess.

Successively, for obtaining a low resistance gate electrode, a metalsilicide layer 7 b, for example, a tungsten silicide (WSi) layer ofabout 150 nm thickness of a thickness greater than that of thepolycrystal silicon layer 7 a is laminated to the surface of thepolycrystal silicon layer 7 a. A silicon oxide film 20 of 150 nmthickness is formed by thermal decomposition of an organic silane as aprotection film (cap layer) on the surface of the WSi layer 7 b.Disposition of such a cap layer has been well-known in the technicalfield of CMOSLSI, but it has not been considered so far in the technicalfield of RF power MOS.

(8) Mask Pattern Forming Step for Gate Electrode:

As shown in FIG. 11, a photoresist pattern (mask) PR3 for forming a gateelectrode is formed. The pattern width of the mask PR3 defines the gatelength and is formed so as to be 0.35 μm or less.

(9) Gate Electrode Pattern Forming Step:

FIG. 12 shows a state after forming the gate electrode pattern. A caplayer 20, a tungsten silicide layer 7 b and a polycrystal silicon layer7 a are successively etched to form a gate electrode 7 comprising thepolycrystal silicon layer 7 a and the WSi layer 7 b by patterning.

(10) Drain Offset Region Forming Step:

As shown in FIG. 13, a low impurity concentration semiconductor region 8is formed by self alignment to the gate electrode 7 by ion implantationin the P type well region 5. The low impurity concentrationsemiconductor region (drain offset region) 8 is applied with an aim ofimproving the drain breakdown voltage. Phosphorus as the N type impurityis used in the ion implantation for forming the drain offset region 8and implantation is conducted under the condition, for example, with anacceleration energy of 50 KeV and at a dose of 1.0×10¹³/cm².

According to the experiment, the relation between the drain offsetregion (offset layer) and the on-resistance is as shown in FIG. 35.Accordingly, the depth of the offset layer is set to 0.2 μm or more.

(11) Source Drain Region Forming Step:

As shown in FIGS. 14( a) and (b), a photoresist pattern (mask) PR4 isformed so as to cover a portion of the drain offset region 8 and the Ptype punch-through layer 3. Successively, impurities are introduced forforming the source drain region by using the mask PR4. Arsenic as the Ntype impurity is selectively introduced into the low impuritysemiconductor region 8 by ion implantation under the conditions with anacceleration energy of 60 KeV and at a dose of 8.0×10¹⁵/cm² through thesilicon oxide film (gate oxide film) 6 into the low impuritysemiconductor region 8.

(12) Contact Region Forming Step:

For reducing the resistance on the surface of the P type punch-throughlayer 3, boron fluoride (BF₂) as the P type impurity is introduced tothe surface of the P type punch-through layer 3 using a mask PR5 underthe conditions with an acceleration energy of 40 KeV and at a dose of2.0×10¹⁵/cm² by using a mask PR5. Then, annealing is applied. This formsa P type contact region 4 on the surface of the P type punch-throughlayer 3.

(13) First Insulation Film (Interlayer Insulation Film) Forming Step:

A first insulation film 20 as an interlayer insulation film is formedover the entire surface of the semiconductor substrate 1. At first, asshown in FIG. 16, a CVD SiO₂ film 20A (100 nm thickness) and a plasmaTEOS film 20B (800 nm thickness) of excellent flatness are successivelyformed on the semiconductor substrate 1. Since the surface of the plasmaTEOS film 20B has a step difference above the gate electrode, it ispolished by about 100 nm to be flattened using CMP (Chemical-MechanicalPolishing).

The CMP technology was adopted so far for IC (LSI) but it was notadopted for high frequency power MOSFET.

In Embodiment 1, by the adoption of the CMP technology, the metal plugto be described later can be attained to obtain a power MOSFET reducedwith the on-resistance.

Then, as shown in FIG. 17, a PSG film 20C (300 nm thickness) is formedon the plasma TEOS film 20B. The total thickness for the firstinsulation film is 1200 nm, which is formed to a thickness greater thanthe second insulation film (interlayer insulation film) to be describedlater. This intends to reduce the parasitic capacitance of wirings.

The CVD SiO₂ film 20A can be replaced with silicon nitride (SiN). Use ofthe silicon nitride can block invasion of OH ions to the gate oxide filmand is effective as a countermeasure for hot carriers.

(14) Forming Step for Electrode Leading Opening:

As shown in FIG. 18, a photoresist pattern (mask) PR6 is formed on thePSG film 20C. Successively, as shown in FIG. 19, the first insulationfilm (20) is removed selectively by using the mask PR6 to form electrodeleading electrode openings CH1.

(15) Metal Plug Forming Step:

As shown in FIGS. 20 (a) and (b), metal plugs 21 comprising W (tungsten)are formed in the electrode leading openings CH1, respectively.

At first, a TiN (titanium nitride) layer is formed as a barrier layer bya sputtering method to the surface of the first insulation film (20)formed with the electrode leading openings CH1 such that W (tungsten)does not diffuse into the semiconductor regions (8, 9). Successively, ahigh melting metal layer made, for example, of W (tungsten) is formed bya CVD process. Then, the high melting metal layer and the barrier layerare etched back. As a result, the metal plugs (P1) substantially inflush with the first insulation film 20 are buried in the electrodeleading openings CH1. That is, the metal plugs P1 are connected to thesource region (first region) 10, the drain region (second region) 9 andthe leach through layer (3), respectively.

(16) Forming Step for First Conductor Layer (First Layer Wiring):

As shown in FIG. 21, a first conductor layer (first layer wiring) M1 isformed on the first insulation film 20 by sputtering. The firstconductor layer comprises an aluminum alloy having a low resistance andmigration resistance. More specifically, an AlCu alloy is adopted forthe material. The film thickness is about 400 nm. Successively, as shownin FIG. 22, a photoresist pattern (mask) PR7 is formed on the firstconductor layer M1. Then, as shown in FIG. 23( a), (b), the firstconductor layer M1 is patterned by using the mask PR7.

(17) Forming Step for Second Insulation Film (Interlayer InsulationFilm)

A second insulation film 30 is formed as an interlayer insulation filmover the entire surface of the semiconductor substrate 1. As shown inFIG. 24, a plasma TEOS film 30A (300 nm thickness), an SOG film 30B (300nm thickness) and a plasma TEOS film 30C (300 nm thickness) are formedsuccessively on the semiconductor substrate 1. The SOG film 30B isformed for moderating the step difference in the plasma TEOS film 30A.

(18) Forming Step for Wiring Connection Opening

As shown in FIG. 25, a photoresist pattern (mask) PR8 is formed on thesecond insulation film 30. Successively, as shown in FIG. 26, the secondinsulation film 30 (30A, 30B, 30C) is selectively removed by using themask, to form wiring connection openings CH2. FIG. 26 shows a crosssectional structure of the semiconductor device after removing the maskPR8.

(19) Forming Step for Second Conductor layer (Second Layer Wiring):

As shown in FIG. 27, a second conductor layer (second layer wiring) M2is formed on the first insulation film 30 by the same method as for thefirst conductor layer M1. Further, the same material as that for thefirst conductor layer is selected as the material for the secondconductor layer (second layer wiring) M2. However, the film thickness isabout four times compared with the thickness of the first conductorlayer M1, which is used with an aim of reducing the resistance as thebacking wirings.

Successively, as shown in FIG. 28, a photoresist pattern (mask) PR9 isformed on the first conductor layer M1.

Then, as shown in FIG. 29, the second conductor layer M2 is patterned byusing the mask PR9 to form a drain electrode (drain wiring) D, and asource electrode (source wiring) S(1). The source electrode (sourcewiring) S(1) electrically connects the source wirings (M1) at the firstlayer between each of the cells and between each of the blocks. FIG. 29shows a cross sectional structure of the semiconductor device afterremoving the mask PR9.

(20) Forming Step for Source Rearface Electrode

Although not illustrated in FIG. 29, a surface protection film is formedon the drain electrode (drain wiring) D and the source electrode (sourcewiring) S(1) after the step (19) and the surface protection film isselectively removed so as to expose the pad portions. Successively, therearface (lower surface) of the semiconductor substrate 1 is ground toreduce the thickness. This grinding is applied as a pretreatment forfabricating a semiconductor wafer into a semiconductor chip. Then, an Nilayer (about 0.1 μm thickness), a Ti layer (about 0.15 μm thickness), anNi layer (about 0.2 μm thickness) and an Ag layer (1.3 μm thickness) ofgood solderability are formed successively to the rearface thereof toform a source rearface electrode. The lower Ti layer is formed for theadhesion between the Ni layer as the barrier layer and the Si substrate,while the upper Ti layer is formed for good adhesion with the Ag layer.

For the Ag layer, peeling of the Ag layer by oxidation has to beconsidered upon attaching (soldering) to a module substrate. An Au layermay be used instead of the Ag layer. In this case, since the Au layerdoes not peel during soldering, low resistance contact, with the modulesubstrate can be attained.

According to this process, the following advantageous effects can beobtained.

(a) The thermal oxidation (heat treatment) applied in the step (2) aboveis accompanied by extending diffusion of ion implanted P typeimpurities.

Accordingly, the P type punch-through layer (P⁺) 3 reaching thesemiconductor substrate 1 is formed in the epitaxy layer 2 in this step.That is, heat treatment for forming the P type punch-through layer 3 andfor forming the field oxide film 102 are applied not independently andseparately but the heat treatment for forming them is conducted all atonce. Therefore, heat treatment (annealing) step for forming the P typepunch-through layer 3 can be saved.

(b) With the reason (a) described above, auto-doping of the impuritiesfrom the substrate to the epitaxy layer can be suppressed. Therefore,the impurity concentration in the P well (PW) can be easily controlledand kept lower. Therefore, even when the gate length is shortened forreducing the on-resistance, the breakdown voltage can be ensuredeffectively.

Accordingly, simplification for the heat treatment step can contributeto the reduction of the on-resistance.

(c) With the reasons (a) and (b) above, large thickness for the epitaxylayer 2 is no more necessary and the thickness can be made to 2.5 μm ormore and 3.5 μm or less while taking the aimed breakdown voltage intoconsideration. Thus, the depth for forming the P type punch-throughlayer (P⁺) 3 is made also shallower, which contributes to the reductionof the on-resistance.(d) Since the P well (PW) is formed after the step of forming the fieldoxide film, the P well does not undergo the effect of the heat treatmentupon forming the field oxide film. That is, the P well is not exposed toa high temperature of 1000° C. or higher. Accordingly, the impurityconcentration of the P well (PW) can be controlled easily and kept low.Therefore, even when the gate length is shortened for reducing theon-resistance, the breakdown voltage can be ensured sufficiently.Accordingly, the order of the P well forming steps as described abovecontributes to the reduction of the on-resistance.(e) As described for the step (4) above, the P well forming step isconducted by ion implantation of two stages. Accordingly, a hightemperature annealing for extending diffusion is not required. That is,the annealing in the step (5) above can be used in common. Therefore,the steps can be simplified. Further, with the same reason as that of(d) above, it contributes to the reduction of the on-resistance.(f) As has been described for the step (2) above, by applying annealingafter forming the field oxide film and before forming the well region inthe step (3) above, it is possible to decrease crystal defects remainedon the surface of the active region in which the MOSFET is formed andensure the breakdown voltage of the gate oxide film by reducing thethickness of the gate oxide film.(g) As has been described for the step (10) above, the drain offsetregion (length) is defined by the mask PR4 and an LDD structure usingthe side wall is not adopted. That is, a high resistance region such asthe drain offset region is not formed on the side of the source region.This can improve the drain breakdown voltage and reduce theon-resistance.<MOSFET Forming Condition>

MOSFET forming conditions in Embodiment 1 are to be explained below.

A resistive component of a MOSFET chip in this embodiment is explainedwith reference to FIG. 30.

FIG. 30 is a model for the resistance of MOSFET according to Embodiment1 shown in FIG. 1 in which RONO is a resistance for the entire chip, Ronis a resistance subtracting the resistance of the P type punch-throughlayer and the substrate from RONO (resistance when the source is takenout of the surface of the substrate), R1 is a drain wiring resistance,Rr is a resistance in the off set region, Rc is a channel resistance, R2is a source wiring resistance, R3 is a source punch-through layerresistance, R4 is a resistance for the P type substrate and R5 is aresistance for the sum of R3 and R4.

For explaining the effect of this Embodiment 1, the on-resistance isdefined not as RON but as Ron hereinafter for limitating the effect ofthe MOSFET main body and the electrode on the rearface of the substrate,and Ron•Wg standarized by the gate width Wg is used. Further, based onthe same concept, mutual conductance, threshold value voltage and thelike are referred to also for the FET performance while taking thesource out of the surface of the substrate unless otherwise specified.

The gate length, the gate-oxide thickness and the offset layer for theEmbodiment 1 are to be explained.

FIG. 31 shows a relation between the gate-oxide thickness and the onresistance while taking the gate breakdown voltage (allowable electricfield intensity of gate oxide) into consideration. FIG. 32 shows arelation between the gate length and the on-resistance, FIG. 33 shows arelation between the gate length and the mutual conductancerespectively. FIG. 34 shows a relation between the gate length and thethreshold voltage. Further, FIG. 35 shows a relation between the depthof the offset layer and the on resistance. FIG. 36 shows the relationbetween the offset length and the on resistance and FIG. 37 shows theoffset length and the drain breakdown voltage, respectively.

FIG. 31, for obtaining a necessary upper limit of 4 Ωmm for the onresistance, it is important that the gate-oxide is thin and, on theother hand, thickness of 10 nm or more with no problem of reliability isrequired for the maximum value at 5V for the input amplitude in GSMapplication use. As a result, the gate-oxide thickness is defined as 10nm or more and 12 nm or less while taking scattering into consideration.

Also in FIG. 32 and FIG. 33, it is intended to reduce the on-resistanceand improve the mutual conductance by the shortening of the gate length,and the ON resistance of 4 Ωmm or less and the mutual conductance of 150mS/mm or more can be obtained at the gate length of 0.35 μm. That is,the length of the gate electrode in the direction of the channel is setat 0.35 μm or less.

The results described above show the case of measurement from the topsurface electrode. Further, the existent technique referred to hereinmeans high frequency power MOSFET setting the gate length to 0.4 μm, theoff-set length to 0.7 μm and the gate-oxide thickness to 20 nm.

The threshold voltage lowers remarkably with respect to the gate lengthand the typical value for the gate length is about 0.3 μm as shown inFIG. 34. By the way, in the MOSFET of this embodiment, the thresholdvoltage shows a reverse short-channel characteristic by applying a lowtemperature treatment (heat treatment at 1200° C. or lower) for theentire process, and lowering of the threshold voltage is suppressed asfar as the short gate length compared with the conventional structurewith no reverse short channel characteristic.

As shown in FIG. 35, depth of 0.2 μm or more showing less resistancechange is set for the offset region (offset layer) and, as seen in FIG.36 and FIG. 37, the designed value for the offset length is set as 0.4μm or more and 0.8 μm or less. The length is chosen because the drainbreakdown voltage is determined on the side of the drain low resistancelayer, and parasitic bipolar operation less occurs in this region andthe on-resistance is at a sufficiently low value.

FIG. 38 shows a relation between the punch-through stopper layer (P typewell region 5 shown in FIG. 1) and the on-resistance in Embodiment 1 andFIG. 39 shows a relation between the drain breakdown voltage and theposition for the punch-through stopper layer, respectively. The distancetoward the drain is defined as (+) and toward the source side as (−)with the position at the drain end of the gate electrode as a reference(0). While the on-resistance lowers by displacing the punch-throughstopper toward the source, the breakdown voltage lowers toward thenegative area around 0 as a boundary. This is because punch-throughoccurs between the drain and the source and, in view of the relationdescribed above, the position for the punch-through stopper ispreferably from 0 or more and 0.2 μm or less.

Then, the substrate forming conditions for MOSFET according to thisembodiment is to be explained below.

FIG. 40 shows the impurity concentration distribution along thedirection of the depth near the punch-through layer (B-B′) plane inFIG. 1) when the epitaxy layer thickness is changed and FIG. 41 showsthe resistivity of the punch-through layer when the thickness of theepitaxy layer is changed, respectively. Further, FIG. 42 shows theimpurity concentration distribution near the offset layer (C-C′ plane inFIG. 1) and FIG. 48 shows the epitaxy layer thickness and the (drain)breakdown voltage near.

In FIG. 40 and FIG. 41, the epitaxy layer is not in contiguous with thepunch-through layer at the thickness of the layer of 4 μm, and thethickness has to be 3.5 μm or less.

Further, in FIG. 42 and FIG. 43, the breakdown voltage with the drain Ntype layer has a necessary and sufficient value at the thickness of theepitaxy layer of 2.5 μm or more. In view of the above, the thickness ofthe high resistance layer (epitaxy layer) formed on the low resistancesemiconductor substrate is appropriately from 2.5 μm or more to 3.5 μmor less.

FIG. 44 shows comparison for the static characteristics between thisinvention and the existent MOSFET with the gate electrode of 0.4 μm.Both of the devices has the gate width of 36 mm, and the on-resistance,the mutual conductance, the saturated current and the like have beenremarkably improved according to this invention.

Then, FIG. 47 shows a large signal high frequency characteristics ofMOSFET chip (this invention) of Embodiment 1. FIG. 47 shows a relationbetween the output power and the power-added efficiency, on the premiseof application to GSM, in a case of inputting a sinusoidal signal at 900MHz while setting a power source voltage to 3.5V and keeping the biascurrent content. This invention and the existent technique are compared,in which the gate width is 28 mm in the former and 36 mm in the latter.In both of the devices, tuning is conducted at the output such that thepower-added efficiency reaches a peak at the output power of 2.0 W. Ascan be seen from the figure, the peak efficiency is improved by about 5%in this invention compared with the conventional art and the efficiencyof 65% has been attained.

Then, FIG. 48 shows the gate width dependence of the large signal highfrequency characteristic of the chip according to this invention. Whilethe characteristics shown in FIG. 48 are measured in the same manner asthe characteristics shown in FIG. 47 described above, optimal tuning isapplied for obtaining efficiency on every gate width. It can be seenfrom FIG. 48 that an optimal gate width for obtaining a power-addedefficiency of 65% or higher at 2 W is about 28 mm. Similar performancecan also be obtained with the gate width from 24 mm to 30 mm. In thesame manner, when considering the application to PCS and as a result ofevaluating the large signal characteristics at 1900 MHz, a power-addedefficiency of about 55% at an output power of 1 W could be realized witha gate width of 12 mm.

<Constitution of Amplifier>

FIG. 49 shows a circuit structure of an amplifier using MOSFET accordingto this embodiment. The amplifier shown in FIG. 49 is a three stageamplifier applied to GSM in which one MOSFET (1 chip) is used for eachof the input stage and the driver stage. Then, two MOSFETs (2 chips) areused for the output stage, to constitute a DD-CIMA (divided andcollectively impedance matched amplifier). The gate width (Wg) of MOSFETis 6 mm for the input stage, 18 mm for the driver stage and 28 mm forthe output stage (2 chips). Input/output matching is conducted with astrip line 100 and a chip capacitor for each of the devices and designedso as to obtain the output power efficiently. It is adapted such that abias voltage for controlling the operation point is applied byresistance division to the input for each of the stages and the outputpower is controlled by controlling the voltage.

The DD-CIMA is a method developed as a countermeasure for thecharacteristics that the output voltage is saturated as the gate widthis made larger, for taking parallel impedance matching while arrangingtwo devices (chips) in parallel as the output stage of a modulerequiring high power (literature 2). According to this circuittechnique, an output power about twice as high as the output power thatcan be obtained from one device can be obtained. Further, it isexcellent in the heat dissipation by the division of the chip.

FIG. 50 shows a package module in which this amplifier is incorporatedinto a package. 500 represents a laminate type ceramic package of amulti-layered wiring structure. Microstrip lines 501 are formed by metalplating on the surface of the package 500. This module attains anoverall efficiency of about 55% at a saturated output power of 4 W and apower of 3.5 W under the conditions at a frequency of 900 MHz, a powersource voltage of 3.5 V and an input power of 0 dBm.

In this embodiment, discrete parts such as MOSFET, capacitors andresistors are incorporated as a module but the technique of thisinvention is also applicable to a circuit in which they are entirely orpartially integrated.

Further, it is not always necessary that devices of an identicalstructure are used for each of the stages of the three stage amplifiercircuit. For example, since high gain is required for the initial stage,driver stage devices of a short gate length or short offset length maysometimes be used.

Embodiment 2

Other embodiments of this invention are to be explained with referenceto FIG. 51 to FIG. 56.

<Cross Sectional Structure of Basic Cell>

FIG. 51 is a cross sectional view of a structure in which the oxidethickness is increased on both ends of the gate electrode in Embodiment1, that is, MOSFET in Embodiment 2 having a gate bird's beak. FIG. 52shows the voltage dependence of the capacitance between the gate and thedrain in Embodiment 2. FIG. 53 shows a relation between the signal gainof a small level and the frequency.

In FIG. 51, the oxide thickness on both ends of the gate has a taperedform with the maximum thickness of 30 nm relative to the thickness ofthe gate oxide film of 10 nm (or the bird's beak obtained by selectiveoxidation LOCOS).

That is, a semiconductor device according to Embodiment 2 comprise asemiconductor substrate of a first conduction type, a semiconductorlayer of a first conduction type situated to one main surface of thesubstrate and having an impurity concentration lower than that of thesemiconductor substrate, a first region and a second region of a secondconduction type opposite to the first conduction type disposed beingspace apart from each other in the main surface of the semiconductorlayer, a third region disposed between the first region and the secondregion in the main surface of the semiconductor layer, situated beingspaced apart from the first region and in contact with the second regionand having an impurity concentration lower than that of the firstregion, a gate electrode disposed by way of a gate insulation film onthe main surface of the semiconductor layer and situated between thefirst region and the third region, so as to overlap at a portion thereofon the first region and the third region, respectively, a firstelectrode and a second electrode connected, respectively, with the firstregion and the second region, a third electrode connected with the othermain surface opposite to one main surface of the semiconductorsubstrate, in which the first film thickness (6 a) of the gateinsulation film present between overlap of the third region and the gateelectrode is greater than the second film thickness (6 b) of the gateinsulation film on the main surface of the semiconductor layer situatedbetween the first region and the third region.

Thus, as shown in FIG. 52, capacitance between the gate and the drain(Cdg) can be reduced by about 20% under the condition of the thicknessfrom 10 nm to 30 nm. The measuring method is as per the circuitconstitution shown in FIG. 52. Reduction in the capacitance between thegate and the drain (Cdg) can reduce the feedback capacitance (Crss)desired for the RF operation at high gain.

Further, as shown in FIG. 53, the small signal gain is also improved byabout 0.5 dB near the frequency at 900 MHz.

According to Embodiment 2, electric field intensity can be moderated bydisposing the bird's beak. Then, within 0.005 μm depth of the offsetfrom the surface of the offset layer 8, it is possible to attain a peakvalue for the impurity concentration at the surface of 1×10¹⁹/cm³ ormore and further reduce the on-resistance.

In Embodiment 2, the oxide thickness of the gate electrode on both sidesof the drain and the source is increased but the purpose can be attainedby increasing the thickness only on the side of the drain. Theembodiment for this constitution is to be explained later.

<Process>

Succeeding to the step (9) for Embodiment 1 (refer to FIG. 12), thefollowing steps are conducted.

(9-1) As shown in FIG. 54, an oxide film 21 is formed selectively bythermal oxidation. In this step, bird's beak is formed at the end thegate electrode. That is, an oxide film (maximum thickness: 30 nm) of athickness greater than the gate oxide film (10 nm thickness) is formedbelow the gate electrode end.(9-2) Successively, as shown in FIG. 55, impurities are introducedthrough the silicon oxide film 21 for forming a drain offset region.That is, a low impurity semiconductor region (drain offset region) 8 isformed in self-alignment to the gate electrode 7 in the P well region 5by ion implantation. Phosphorous as the N type impurity is used for ionimplantation for forming an offset region 8.

Successively, the process: from the source•drain region forming step(11) to the source rearface electrode forming step (20) described forEmbodiment 1 are conducted.

By the method described above, a power MOSFET shown in FIG. 56 iscompleted.

Embodiment 3

Other embodiment of this invention is to be explained with reference toFIG. 54 to FIG. 60.

<Cross Sectional Structure of Basic Cell>

Embodiment 3 is a modification of Embodiment 2 in which the thicknessfor a portion of the gate oxide film of the gate electrode on the sideof the drain is increased (refer to FIG. 60).

<Process>

Succeeding to the step (9) of Embodiment 1 (refer to FIG. 12), thefollowing steps are conducted.

(9-1) As shown in FIG. 57, a silicon nitride film 200 is formed on asemiconductor substrate 1.

(9-2) Successively, as shown in FIG. 58, the silicon nitride film 200 isselectively removed so as to expose the end of the gate electrode on theside of the drain. Then, the gate bird's beak is formed only on the sideof the drain by thermal oxidation using the silicon nitride film 200 asa mask.(9-3) Successively, as shown in FIG. 59, impurities are introducedthrough a silicon oxide film 21 for forming a drain-offset region. Thatis, a low impurity semiconductor region (drain-offset region) 8 isformed in self alignment to a gate electrode 7 into a P type well region5 by ion implantation.

Successively, the process from the step (11) to the step (20) inEmbodiment 1 is conducted.

By the method described above, a power MOSFET shown in FIG. 60 iscompleted.

Embodiment 4

Embodiment 4 of this invention is to be explained with reference to FIG.61.

Embodiment 4 provides an N gate MOS in which a drain offset region 8 isformed only to the drain region 9.

According to Embodiment 4, as shown in FIG. 61, a deep N type highresistance region like that a drain offset region 8 is not disposed onthe side of the source (N type source region 10 of high impurityconcentration). Accordingly, the amount of overlap between the gateelectrode on the side of the source and the N type region (source region10) is smaller compared with a case where the drain offset region 8 ispresent on the side of the source as in Embodiment 1, to provide aneffect for improving the short channel characteristic.

In the process of Embodiment 4, according to the process of Embodiment1, ion implantation is conducted at the stage of the step (10) forforming the drain offset region 8 only on the side of the drain by usinga mask. In this case, photolithographic step is increased by onecompared with Embodiment 1.

Embodiment 5

Embodiment 5 according to this invention is to be explained withreference to FIG. 62 and FIG. 63.

FIG. 62 is a cross sectional view in a case where the impurityconcentration near the surface of the drain offset region is increased.This structure is effective for decreasing the degradation rate for theon-resistance under the effect of hot electrons implanted into the oxidefilm on the offset region. After ion implantation for forming the offsetregion 8 shown in FIG. 1, As (arsenic) ions are implanted to the surfaceof the offset region 8 under conditions of the ion implantation about at20 KeV and 3×10¹³ atoms/cm² to form a second offset region 8 a. In thisstep, the surface impurity concentration at the gate end is mostimportant. That is, FIG. 63 shows a relation between the degradationrate of the on-resistance with the hot electrons and the impurityconcentration at the surface of the gate end of the offset layer. About26% of degradation is caused with no particular countermeasure, but thedegradation can be reduced to 10% or less by increasing the surfaceimpurity concentration to 1×10¹⁸ atoms/cm³ in accordance with thisstructure. This is because the N type offset layer less undergoes theeffect of electrons implanted to the oxide film by the increase in thesurface impurity concentration.

In the method of manufacturing Embodiment 5 according to this invention,ion implantation for forming the offset region 8 and ion implantationfor forming the offset region 8 a are successively conducted at theforming step (10) for the drain-offset region in Embodiment 1 describedpreviously.

Embodiment 6

Embodiment 6 of this invention is to be explained with reference to FIG.64.

In FIG. 64, a P type pocket layer 5 a having an impurity concentrationhigher than the impurity concentration of the epitaxy layer 2 isdisposed at a position deeper than the offset region 8 in addition tothe punch-through stopper 5 of Embodiment 1. It has a P type layer 201below the N type drain region below an N type drain region 9 formedsimultaneously with the pocket layer 5 a. The pocket layer 5 a and the Ptype layer 201 below the drain region 9 are formed by obliqueimplantation of B (boron), for example, by using a photoresist uponforming the N type source drain region. The pocket layer 5 a iseffective for suppressing the lowering of the threshold voltage.Further, a P type layer 201 below the drain region 9 has an effect ofspacing the breakdown point of MOSFET from the channel portion.

Accordingly, Embodiment 6 can enhance the short channel characteristicand improve the destruction strength of the device.

Embodiment 7

Embodiment 7 according to this invention is to be explained withreference to FIG. 65 and FIG. 66.

FIG. 65 and FIG. 66 show a cross sectional view and a block plan view ofa power MOSFET in which gate wirings (first layer wirings) are disposedin parallel with a gate electrode respectively. FIG. 65 is a crosssectional view taken along line E-E′ shown in FIG. 66. According toEmbodiment 1 described previously, the first layer wiring 11 (M1)connected with the gate electrode is disposed in perpendicular to thegate electrode being extended to the periphery of the unit block.According to Embodiment 7, the gate wiring (first layer wiring) isdisposed in parallel with the gate electrode and backed by the gateelectrode.

In FIG. 65, 300 is a first layer wiring for gate shunt disposed forreducing the resistance of the gate wiring. As the feature of Embodiment6, since the drain first layer wiring and the gate wiring are opposed toeach other, the parasitic wiring capacitance between the drain and thegate increases but, since the number of the gate wirings is identicalwith the number of gate electrodes and the number of gate wirings isincreased compared with that in Embodiment 1, this has an effect ofreducing the resistance in the gate wiring. This embodiment is appliedto a case where the gate resistance is more effective than thecapacitance between the drain and gate for the high frequencycharacteristic.

Embodiment 8

Embodiment 8 according to this invention is to be explained withreference to FIG. 67.

A plan view shown in FIG. 67 (electrode pattern layout) is amodification of Embodiment 1 shown in FIG. 2. According to Embodiment 8,the second layer wiring for the gate is taken out by one from themidpoint of the unit block. This makes the distance from the gate pad toeach of MOSFET cells more uniform compared with the case of disposingsecond layer wirings for the gate on both sides of the unit block asshown in FIG. 2. Accordingly, deviation in the operation timing due tophase displacement of the input signals at the gate of each of the FETcells can be decreased to reduce the power loss over for entire chip171.

Embodiment 9

FIG. 68 shows a layout in which shunt of the gate by metal wirings(first layer wiring) is not conducted but short gate electrodes arearranged. In this case, the parasitic wiring capacitance between thedrain and the gate can be reduced.

Embodiment 10

Embodiment 10 according to this invention is to be explained withreference to FIG. 69 and FIG. 70.

FIG. 69 and FIG. 70 show a modification of Embodiment 7, and show acrosssectional view and a plan view of a power MOSFET in which a source fieldplate 400 is disposed. FIG. 70 is a cross sectional view taken alongline F-F shown in FIG. 69.

According to Embodiment 10, as shown in FIG. 69, a portion of the firstlayer wiring for source extends over the offset region 8 to constitute asource field plate 400. That is, as shown in FIG. 70, the gate wirings(first layer wiring) are arranged in parallel with the gate electrodelike that in Embodiment 7 and backed by the gate electrode. Then, thesource field plate 400 is formed by inserting the first layer wiring 11for the source between the drain wiring and the gate shunt wiring in astripe shape along the gate electrode 7. The field plate 400 is fixed tothe ground potential to provide an effect of improving the drainbreakdown voltage by the moderation of electric field intensity of theoffset region 8.

Embodiment 11

An Embodiment 11 according to this invention is to be explained withreference to FIG. 71 and FIG. 72.

FIG. 71 is a plan view of a gate protection diode as Embodiment 11, andFIG. 72 is a cross sectional view taken along line D-D′ in FIG. 71.

The gate protection diode in Embodiment 1 (refer to FIG. 4 and FIG. 5)is connected by the second layer wiring to the gate pad. On the otherhand, in the diode of Embodiment 11, the gate pad and the gate electrodeare already connected by the first layer wiring.

This enables to prevent the destruction of the gate oxide film due toprocess damages such as caused by charge up in the steps subsequent tothe first layer wiring.

Embodiment 12

Embodiment 12 according to this invention is to be explained withreference to FIG. 73.

In the layout of FIG. 73, two devices of MOSFET of this invention usedfor the output stage of the amplifier circuit shown in FIG. 49 arearranged in one chip. Gates and drains for both of the devices areconnected with resistance R of about 10Ω, respectively. The gateelectrode material is, for example, used for the resistor.

Embodiment 12 can decrease the scattering of the performance between thetwo devices and decrease the area of chip occupying the module.

Embodiment 13

Embodiment 13 according to this invention is to be explained withreference to FIG. 74.

In the layout of FIG. 74, power MOSFET used for the input stage and thedriver stage of the amplifier circuit shown in FIG. 49 are arranged inone chip. Since this is a source-grounded circuit, while thesemiconductor substrate 1 is in common with them but gates and drainsfor both of the devices are electrically insulated. In this case, astructure, for example, of disposing a P type low resistance(leach-through) layer between both of them and disposing a wiring layeron the top surface of the substrate is adopted for the shield. Such astructure can be obtained in the course of forming the power MOSFETEmbodiment 1 with no particular requirement for the process of formingthe shield. Also in Embodiment 13, it is possible to save the area ofchip occupying the module. Further, in Embodiment 13, the two MOSFET arelaid out in a relation vertically upset to each other for improving thearea efficiency of the module layout.

Further, in a so-called dual band amplifier of handling two differentfrequencies, two sets of a multi-stage amplifier circuit areincorporated into one module. Therefore, chips shown in FIG. 74 are alsodisposed by two sets. In this case, since adjacent FET do not operatesimultaneously by constituting each of the amplifier circuits using theinitial stage FET in one chip and the driver stage FET in the otherchip, stable operation is possible.

Embodiment 14

Embodiment 14 according to this invention is to be explained withreference to FIG. 75.

In FIG. 75, current sensing MOSFETs are added to the chip of Embodiment12 shown in FIG. 73. The cell structure of MOSFET is identical with thatfor the output stage device, and the gate width is set to about 1/1000for the output stage device. The current flowing through the outputstage device is monitored by the structure and fed back to a controlcircuit. Further, MOSFET may sometimes be added as a switching inaddition to the current sensing use. This is applied, for example, to acase where the device is intended for complete OFF operation in theapplication use, for example, for dual band operation. Since the MOSFEThas a structure of exposing the gate and drain terminals, a protectiondevice connected to each of the terminals is incorporated. Since Ms hasa small gate width, when a high positive voltage is applied to the drainterminal in view of time, the energy can not be absorbed by breakdowncurrent, leading to destruction. Further, also in a case of a negativevoltage, the body diode is turned ON to flow current but the currentcapacity is insufficient leading to destruction. As a countermeasure forboth of them, a diode having a breakdown voltage comparable with FET andof a sufficient size is used as the protection device.

Embodiment 15

A semiconductor device (P gate•N channel type silicon Si power MOSFET: Pgate MOS) as Embodiment 15 according to this invention is to beexplained with reference to FIG. 76 to FIG. 78 and FIG. 82. Embodiment15 has a feature in the gate electrode and the bulk structure forreducing the on-resistance.

<Cross Sectional Structure of Basic Cell>

FIG. 76 is a cross sectional view of a basic cell, constituted with a Pgate MOS as Embodiment 15 of this invention.

The P type gate MOS shown in FIG. 76 comprises a P type siliconesemiconductor substrate 1, a P type silicon semiconductor epitaxy layer2 having an impurity concentration lower than that of the substratesituated on one main surface of the substrate, a first N type region(source region) 10 and a second N type region (drain region) 9 disposedwithin the main surface of the epitaxy layer being spaced from eachother, a third N type region (offset region) 8 disposed between thesource region 10 and the drain region 9 within the main surface of theepitaxy layer while being spaced from the source region and in contactwith the drain region and having an impurity concentration lower thanthat in the drain region 9, a P type gate electrode 7 situated on themain surface in which the channel is formed between the source region 10and the offset region 8, overlapping at the ends thereof on the sourceregion 10 and the offset region 8, respectively, and terminated on thesource region 10 and the offset region 8 by way of a gate insulationfilm (6), a first electrode S(1) and a second electrode D electricallyconnected to the source region 10 and the drain region 9 respectively,and a third electrode S (2) connected to the other main surface of thesemiconductor substrate 1 opposite to the one main surface, and includesan N type distribution area 55 situated between the source region 10 andthe offset region 8 in which the impurity concentration distribution ofthe impurity in the region (P type well region) 5 formed with thechannel is lowered from the surface to the semiconductor substrate 1.FIG. 82 shows the impurity distribution in the P type well region 5shown in FIG. 76 (taken along line G-G′).

According to Embodiment 15, since the gate electrode is a P typesemiconductor, that is, a P type gate, the threshold voltage Vthincreases by 1V in view of the difference of the work function.Therefore, although the N type layer 55 is disposed to the surface ofthe P type semiconductor region, a normally off, that is, enhanced statecan be kept in a state where the gate voltage is not applied. Then,presence of the N type layer 55 provides an effect of extending theextension of a depletion layer 400 from a drain junction (Jd) as shownin FIG. 77 and, particularly, a portion indicated by an arrow A, is freefrom the effect of the gate oxide film boundary by the N type layer 55.Therefore, the drain breakdown voltage is improved. In view of theabove, when a P type gate MOSS having a drain breakdown voltage of anaimed value identical with that for N type gate MOS is designed, theimpurity concentration in the drain offset region can be increased. Thisis because there is no more required to extend the depletion layer tothe side of the drain offset region. Since the concentration in theoffset region can be increased, the resistance of the drain offsetregion can be reduced. Accordingly, this can contribute to the reductionof the on-resistance.

<Layout for Unit Block>

The layout for the unit block in Embodiment 15 is as shown in FIG. 2like that for Embodiment 1 and, accordingly, explanations therefor areto be omitted.

<Chip Layout>

The chip layout for Embodiment 15 is as shown in FIG. 3 like that forEmbodiment 1. Accordingly, explanations therefor are to be omitted.

<Gate Protection Diode>

The gate protection diode for Embodiment 15 is as shown in FIG. 4 andFIG. 5 like that for Embodiment 1. Accordingly, explanations thereforare also omitted.

<Process>

A manufacturing method of a P type gate MOS Embodiment 15 is to beexplained below with reference to FIGS. 78(A) and (B).

Succeeding to the step (3) for Embodiment 1, arsenic (As) of a lowerdiffusion rate compared with phosphorus (P) is introduced into theepitaxy layer 2 by ion implantation selectively using a mask PR 2. Theion implantation is conducted under the conditions with an accelerationenergy of 80 KeV and at a dose of 4.5×10¹¹/cm². Successively, annealing(950° C. 60 sec) is applied to form an N type region (N type region 55shown in FIG. 76) having a peak value of the impurity concentration(about 6×10¹⁶/cm³) on the surface. Since arsenic (As) is used as theimpurities for forming the N type region 55 as described above, theimpurities less diffuse to the inside of the epitaxy layer and thesurface of the N type region 55 can be maintained at a high impurityconcentration.

Successively, after forming the gate oxide film in the step (6) forEmbodiment 1, a conductor layer for the gate electrode in the step (7)is formed (refer to FIG. 10). At first, an intrinsic polycrystal siliconlayer 7 a is covered by a CVD process. Then, boron impurities areintroduced to the polycrystal silicon layer 7 a by ion implantation toform a P type gate electrode. Formation of the P type gate electrode byion implantation is adopted with an aim of suppressing the boronconcentration in the vicinity of the gate oxide film for decreasing thedamages to the gate oxide film by boron.

Subsequently, the process from the step (8) to the step (20) ofEmbodiment 1 is conducted.

Embodiment 16

Embodiment 16 provides a P type gate MOS in which a shallow offsetregion 8 is formed only on the side of the drain region 9, which is tobe explained below with reference to FIG. 79 to FIG. 81.

Embodiment 16 is based on the process for Embodiment 15 and an offsetregion 8 is formed only on the side of a drain region 9 such thatphosphorous is not introduced to the surface of a P type well region 5and a P type source punch-through region 3 by using a mask PR 10 upondrain offset region forming step (refer to step (10) in the process forEmbodiment 1).

Then, as shown in FIG. 80, source•drain regions (10, 9 are formed. Themethod of forming the source•drain regions (10, 9) is in accordance withthe step (11) of the process for Embodiment 1. Subsequently, it goes tothe step (12) of the process for Embodiment 1.

By the procedures described above, a P type gate MOS is completed asshown in FIG. 81.

According to Embodiment 16, phosphorus is not introduced to the surfaceof the P type punch-through region 3 by the PR10. Therefore, ionimplantation at high concentration is not required in the introductionof impurities for forming the P type contact region on the surface ofthe P type source punch-through region 3. That is, ion damage caused byhigh concentration ion implantation can be avoided and the surfaceimpurity concentration in the P type contact region can be improved.Accordingly, low resistance contact can be attained, which contributesto the reduction of the on-resistance.

Embodiment 16 is applicable also to the N gate MOS as in Embodiment 1.

Embodiment 17

Embodiment 17 is a modification of Embodiment 14, which has a buried Ntype layer in which the peak position for the impurity distribution inan N type layer 55 is set at a position deeper than the surface of theepitaxy layer. The depth for the peak position of the buried N typelayer is about 0.05 μm from the surface thereof and the peakconcentration thereof is about 2×10¹⁷/cm³.

The manufacturing method for Embodiment 17 is conducted based onEmbodiment 15. That is, the buried N type layer is formed by setting theion implantation conditions so as to provide the impurity distributionin the step for forming the N type layer 55 in Embodiment 15.

In the P type gate MOS having the buried N type layer as in Embodiment17, since the N type layer is buried, surface scattering of electronscan be avoided by the uneven boundary of the gate oxide film. That is,only the scattering of bulk has to be considered in Embodiment 16.Accordingly, the carrier mobility can be improved. In other words, theon-resistance can be reduced. Embodiment 17 is also applicable to the Ngate MOS as in Embodiment 1.

While the invention made by the present inventor has been explainedbased on the preferred embodiments, this invention is not restrictedonly to the embodiments described above but can be modified variouslywithin a scope not departing the gist thereof.

The features of this invention are summarized based on the embodimentsdescribed above as shown below.

(1) A semiconductor device according to this invention comprises:

a semiconductor substrate of a first conduction type,

a semiconductor layer of a first conduction type formed on the surfaceof the semiconductor substrate,

a first region and a second region of a second conduction type oppositeto the first conduction type being spaced apart from each other situatedto a portion of a main surface of the semiconductor layer on both sidesof a region to be formed with a channel therebetween, the second regioncomprising a low impurity concentration region in contact with a regionto be formed with the channel and a high impurity concentration regionin contact with the low impurity concentration region,

a gate electrode formed by way of a gate insulation film above thechannel region,

a leach-through layer of a first conduction type formed to other portionof the main surface of the semiconductor layer so as to be in contactwith the first region and the semiconductor substrate,

a first insulation film covering the gate electrode, the first region,the second region and the leach-through layer,

a first conductor plug, a second conductor plug and a third conductorplug connected, respectively, with the first region, the high impurityconcentration region of the second region and the leach-through layer byway of openings disposed in the first insulation film,

a first conductor layer connected with the first conductor plug and thethird conductor plug and a second conductor layer connected with thesecond conductor plug, and

a third conductor layer connected with a lower surface of thesemiconductor substrate.

(2) In the constitution (1) described above, a second insulation film iscovered on the first conductor layer and the second conductor layer, afirst opening and a second opening are disposed to the second insulationfilm being situated on the first conductor plug and the second conductorplug, respectively, a first wiring layer is connected with the firstconductor layer through the fist opening, and a second wiring layer isconnected with the second conductor layer through the second opening.(3) In the constitution (1) described above, the third conductor plug isconnected with the gate electrode through the opening disposed in thefirst insulation film, and a fourth conductor layer is connected withthe third plug.(4) In the constitution (1) described above, the first conductor plugand second conductor plug comprise tungsten and the first conductorlayer and the second conductor layer comprise an aluminum alloy.(5) In the constitution (4) described above, the first conductor layerand the second conductor layer comprise an AlCu alloy.(6) In the constitution (3) described above, the third conductor plugcomprise tungsten and the fourth conductor layer comprises an aluminumalloy.(7) In the constitution (6) described above, the first conductor layerand second conductor layer comprise an AlCu alloy.(8) In the constitution (2) described above, the first wiring layer andthe second wiring layer comprise an aluminum alloy.(9) In the constitution (1) described above, the first conductor plugand the second conductor plug comprise W, the first conductor layer andthe second conductor layer comprise an AlCu alloy and the thirdconductor layer has an electrode structure in contact with the lowersurface of the semiconductor substrate and containing Ni, Ti and Au.(10) In the constitution (3) described above, the third conductor plugcomprises W, the gate electrode has an electrode structure in which ametal silicide is laminated on polycrystal Si and the fourthsemiconductor layer comprises an AlCu alloy.(11) In the semiconductor device according to this invention, aninsulated gate field effect transistor and a protection diode connectedwith a gate for protecting the transistor are constituted to asemiconductor main body comprising a semiconductor substrate of a firstprotection type and a semiconductor layer of a first conduction typeformed on the upper surface of the semiconductor substrate, wherein

the insulated gate field effect transistor comprises:

a first region and a second region of a second conduction type oppositeto the first conduction type situated being spaced apart from each otheron one main surface of a semiconductor layer defined by a deviceisolation region on both sides of a channel-forming region, the secondregion comprising a low impurity concentration region in contact with aregion to be formed with a channel and a high impurity concentrationregion in contact with the low concentration region,

a gate electrode formed above the channel region by way of a gateinsulation film,

a first leach-through layer of a first conduction type formed to aportion of the first main surface so as to be in contact with the firstregion and the semiconductor substrate,

a first insulation film covering the gate electrode, the first region,the second region and the first leach-through layer,

a first conductor plug, a second conductor plug and a third conductorplug connected, respectively, with the first region, the high impurityconcentration region of the second region and the first leach-throughlayer through openings disposed in the first insulation film,

a first conductor layer connected with the first conductor plug and thethird conductor plug, and a second conductor layer connected with thesecond conductor plug, and

a third conductor layer connected with the lower surface of thesemiconductor substrate, and

the protection diode is a back-to-back diode comprising:

a third region of a second conduction type formed to a second mainsurface of the semiconductor layer defined with a device isolationregion, and

a fourth region and a fifth region of a first conduction type formed inthe third region and constituted with the fourth region, the thirdregion and the fifth region.

(12) In the constitution (12) described above, the fourth region iselectrically connected with a gate electrode pad disposed on the mainsurface of the semiconductor layer by way of a fourth conductor plug.

(13) In the constitution (12) described above, the fourth plug comprisesa plurality of plugs.

(14) In the constitution (11) described above, the second main surfaceis covered with the first insulation film, the fourth conductor plug andthe fifth are connected, respectively, with the fourth region and thefifth region through the openings disposed to the first insulation film,a sixth conductor layer and a seventh conductor layer are connected withthe fourth conductor plug and the fifth conductor plug, and a secondleach-through layer is disposed to the second main surface, being incontact with the fifth region and in contact with the semiconductorsubstrate.(15) In the constitution (14) described above, the sixth conductor layerextends on the device isolation region, and the gate electrode pad isconnected with the sixth conductor layer on the device isolation region.(16) In the constitution (14) described above, the first, second, third,fourth and fifth conductor plugs comprise tungsten while the first,second, sixth and seventh conductor layers comprise an aluminum alloy.(17) In the constitution (16) described above, the first, second, sixthand seventh conductor layers comprise an AlCu alloy.(18) In an insulated gate type field effect semiconductor power devicehaving a drain offset region according to this invention, an N typesource region and an N type drain region having an offset region areformed, being spaced apart from each other, to a P type siliconsemiconductor layer, a gate electrode is formed by way of a gateinsulation film to the surface of the P type silicon semiconductor layeras a channel region between the N type source region and the offsetregion, and the gate electrode comprises a silicon semiconductor layercontaining P type impurities.(19) In the constitution (19) described above, the gate electrodecomprises a polycrystal silicon layer containing P type impurities and ametal silicide layer formed on the polycrystal silicon layer.(20) In the constitution (18) described above, the gate insulation filmcomprises a first silicon oxide film formed by thermal oxidation and asecond silicon oxide film formed by gas phase chemical growing on thesilicon oxide film.(21) A semiconductor device according to this invention comprises:

a P type silicon substrate,

a P type silicon semiconductor layer situated to one main surface of thesubstrate and having an impurity concentration lower than that of thesubstrate,

a first N type region and a second N type region disposed being spacedfrom each other within a main surface of a semiconductor layer,

a third N type region situated between the first N type region and thesecond N type region in the main surface of the semiconductor region,being spaced apart from the first N type region and in contact with thesecond N type region, and having an impurity concentration lower thanthat of the second N type region,

a gate electrode disposed by way of a gate insulation film and situatedbetween the first N type region and the third N type region on the mainsurface of the semiconductor layer to be formed with a channel,overlapping at the ends thereof on the first region and the third regionrespectively, and terminating on the first region and the third regionrespectively,

a first electrode and a second electrode connected with the first regionand the second region, respectively and

a third electrode connected with the other main surface of thesemiconductor substrate opposite to one main surface in which

the distribution of the impurity concentration in the semiconductorlayer situated between the first N type region and the third N typeregion comprises and an N type distribution decreasing from the surfaceof the semiconductor layer to the semiconductor substrate.

(22) A semiconductor device according to this invention comprises:

a P type silicon semiconductor substrate,

a P type silicon semiconductor layer situated on one main surface of thesubstrate and having an impurity concentration lower than that of thesubstrate,

a first N type region and a second N type region disposed being spacedapart from each other in the main surface of the semiconductor layer,

a third N type region situated between the first N type region and thesecond N type region in the main surface of the semiconductor layer,being spaced apart from the first N type region and in contact with thesecond N type region and having an impurity concentration lower thanthat of the second N type region.

a gate electrode disposed by way of the gate insulation film andsituated between the first N type region and the third N type region onthe main surface of the semiconductor layer to be formed with a channel,so as to overlap at the ends thereof on the first region and the secondregion, respectively, and terminate on the first region and the thirdregion, respectively,

a first electrode and a second electrode connected, respectively, withthe first region and the second region, and

a third electrode connected the other main surface of the semiconductorsubstrate opposite to the one main surface, in which

the distribution of the impurity concentration in the semiconductorlayer situated between the first N type region and the third N typeregion comprises a P type distribution area increasing from the surfaceof the semiconductor layer to the semiconductor substrate and an N typedistribution area overlapping on the P type distribution area and havinga peak for the impurity concentration at the inside spaced apart fromthe surface of the semiconductor layer.

(23) A semiconductor device according to this invention comprises:

a semiconductor substrate of a first conduction type,

a semiconductor layer of a first conduction type situated to one mainsurface of the semiconductor substrate and having an impurityconcentration lower than that of the semiconductor substrate,

a first region and a second region of a second conduction type oppositeto the first conduction type disposed being spaced apart from each otherin the main surface of the semiconductor layer.

a third region situated between the first region and the second regionin the main surface of the semiconductor layer, being spaced apart fromthe first region and in contact with the second region and having animpurity concentration lower than that of the first region,

a gate electrode disposed by way of a gate insulation film on the mainsurface of the semiconductor layer and situated between the first regionand the third region, so as to overlap at a portion thereof with thefirst region and the third region, respectively,

a first electrode and a second electrode connected, respectively, withthe first region and the second region, and

a third electrode connected to the other main surface of thesemiconductor substrate opposite to one main surface, in which

a fourth region of a first conduction type terminating in the thirdregion is formed selectively to the main surface of the semiconductorlayer situated between the first region and the third region, and having

a pocket layer of a first conduction type having an impurityconcentration higher than the impurity concentration at the surface ofthe fourth region being disposed in the fourth region situated below thegate electrode at a position deeper than the third region.

(24) In the constitution (23) described above, the first electrode andthe third electrode are connected electrically.

(25) In the constitution (23) described above, a fifth region of a firstconduction type in contact with the first region and the semiconductorsubstrate is disposed to the first semiconductor layer.

(26) In the constitution (23) described above, the third electrode isconnected with a first reference potential and the second electrode isconnected with a second potential.

(27) In the constitution (26) described above, the third electrode is asource electrode and the second electrode is a drain electrode.

(28) In the constitution (26) or (27) described above, the firstreferential potential is a ground potential and the second referencepotential is a power source potential.

(29) In the constitution (23) described above, the pocket layer isformed by ion implantation obliquely relative to the main surface of thesemiconductor layer.

(30) A semiconductor device according to this invention comprises:

a semiconductor substrate of a first conduction type,

a semiconductor layer of a first conduction type situated to one mainsurface of the substrate and having an impurity concentration lower thanthat of the semiconductor substrate,

a first region and a second region of a second conduction type oppositeto the first conduction type disposed being space apart from each otherin the main surface of the semiconductor layer,

a third region disposed between the first region and the second regionin the main surface of the semiconductor layer, situated being spacedapart from the first region and in contact with the second region andhaving an impurity concentration lower than that of the first region,

a gate electrode disposed by way of a gate insulation film on the mainsurface of the semiconductor layer and situated between the first regionand the third region, so as to overlap at a portion thereof on the firstregion and the third region, respectively,

a first electrode and a second electrode connected, respectively, withthe first region and the second region,

a third electrode connected with the other main surface opposite to onemain surface of the semiconductor substrate, in which

the first film thickness of the gate insulation film present betweenoverlap of the third region and the gate electrode is greater than thesecond film thickness of the gate insulation film on the main surface ofthe semiconductor layer situated between the first region and the thirdregion.

(31) In the constitution (30) described above, a fourth region of, afirst conduction type terminating in the third region is formedselectively to the main surface of the semiconductor layer situatedbetween the first region and the third region.

(32) In the constitution (30) or (321) described above, the firstelectrode and the third electrode are connected electrically.

(33) In the constitution (30) described above, a fifth region of a firstconduction type in contact with the first region and the semiconductorsubstrate is disposed to the first semiconductor layer.

(34) In the constitution (30) described above, the third electrode isconnected with a first reference potential and the second electrode isconnected with a second reference potential.

(35) In the constitution (34) described above, the third electrode is asource electrode and the second electrode is a drain electrode.

(36) In the constitution (34) or (35) described above, the firstreference potential is a ground potential and the second referencepotential is a power source potential.

(37) In the constitution (30) described above, the gate insulation filmof the first film thickness is formed with a thickness greater than thegate insulation film of the second film thickness so as to form atapered shape.

(38) In the constitution (37) described above, the gate insulation filmof the first film thickness comprises a bird's beak structure.

(39) A semiconductor device according to this invention comprises:

(a) a semiconductor substrate of first conduction type,

(b) a semiconductor layer of a first conduction type disposed on onemain surface of the semiconductor substrate and having an impurityconcentration lower than that of the semiconductor substrate,

(c) a first region and a second region of a second conduction typeopposite to the first conduction type disposed being spaced from eachother in the main surface of the semiconductor layer,

(d) a third region situated in the main surface of the semiconductorlayer between the first region and the second region, being spaced apartfrom the first region and in contact with the second region, and havingan impurity concentration lower than that in the first region.(e) a gate electrode disposed by way of a gate insulation film on themain surface of the semiconductor layer and situated between the firstregion and the third region, so as to overlap at a portion thereof onthe first region and the third region, respectively.(f) a first electrode and a second electrode connected, respectively,with the first region and the second region, and(g) a third electrode connected to the other main surface opposite toone main surface of the semiconductor substrate, in which

a bird's beak is present between overlap of the third region and thegate electrode and

the concentration of the impurity on the surface of the third region issubstantially equal with or higher than the impurity concentration ofthe second region.

(40) In the constitution (39) described above, the impurityconcentration on the surface of the third region has a peak value of1E18 (1×10¹⁸ cm⁻³) or more.

(41) In the constitution (39) or (40) described above, the impurityconcentration on the surface of the third region is distributed within adepth of 0.005 μm from the surface.

(42) A semiconductor device according to this invention comprises:

a substrate in which a semiconductor layer of a first conduction typehaving a low impurity concentration is formed at the main surface,

a first region and a second region of a second conduction type oppositeto the first conduction type disposed, being spaced apart from eachother, in the main surface of the semiconductor layer,

a third region disposed in the main surface of the semiconductor layerbetween the first region and the second region, being spaced apart fromthe first region and in contact with the second region, and having animpurity concentration lower than that of the first region,

a gate electrode situated by way of a gate insulation film on the mainsurface of the semiconductor layer and situated between the first regionand the third region so as to overlap at a portion thereof with thefirst region and the third region, respectively, and

a well region of a first conduction type formed in the semiconductorlayer below the gate insulation film, in which

the first film thickness of the gate insulation film present betweenoverlap of the third region gate electrode is formed at a thicknessgreater than the second film thickness of the gate insulation film onthe main surface of the semiconductor layer situated between the firstregion and the third region, and the third region comprises a shallowhigh concentration region and a deep low concentration region.

(43) In the constitution (42) described above, the well regionterminates in the third region.

(44) In the constitution (42) described above, the well regionterminates below the gate electrode.

(45) In the constitution (42) described above, the gate electrodecomprises a polycrystal silicon layer containing P type impurities and ahigh melting silicide layer laminated on the polycrystal silicon.

(46) A semiconductor device according to this invention comprises:

a semiconductor substrate of a first conduction type,

a semiconductor layer of a first conduction type formed on a mainsurface of the substrate,

a first region and a second region of a second conduction type oppositeto the first conduction type situated, being spaced apart from eachother, in the main surface of the semiconductor layer,

a third region of a second conduction type formed on the main surface ofthe conductor layer between the first region and the second region, soas to be spaced apart from the first region and in contact with thesecond region,

a gate oxide film disposed to the main surface of the semiconductorlayer as a channel region between the first region and the third region,

a gate conductor layer disposed on the gate oxide film,

a first conductor layer connected with the first region,

a second conductor layer connected with the second region, and

a third conductor layer connected with the rearface of the semiconductorsubstrate, in which

the film thickness for each of the first gate oxide film situatedbetween the first region and the gate insulation film and a second gateoxide film situated between the third region and the gate insulationfilm is greater than the thickness of the third gate oxide film disposedto the main surface of the semiconductor layer as the channel region.

(47) In the constitution (46) described above, a fourth region of thefirst conduction type terminates in the third region on the main surfaceof the semiconductor layer situated between the first region and thethird region.

(48) In the constitution (46) or (47) described above, the firstconductor layer and the conductor layer are connected electrically.

(49) In the constitution (46) described above, a fifth region of a firstconduction type in contact with the first region and the semiconductorregion is disposed to the first semiconductor layer.

(50) In the constitution (46) described above, the third conductor layeris connected with a first referential potential and the secondconduction layer is connected with a second referential potential.

(51) In the constitution (50) described above, the third conductor layeris a source rearface electrode and the second conductor layer is a drainelectrode.

(52) In the constitution (50) or (51) described above, the firstreference potential is a ground potential and the second referencepotential is a power source potential.

(53) In the constitution (46) described above, the first gate oxide filmand the second gate oxide film comprise a bird's beak structure.

(54) An insulated gate type semiconductor device having, on the mainsurface of a semiconductor layer, a plurality of channel regions, adrain region and a source region disposed on both side of each of thechannel regions, and a conductor layer for a gate electrode disposed byway of a gate insulation film on each of the channel region surfaces,wherein

a metal plug is connected with the main surface of each of the drainregions and each of the source regions,

a first metal conductor layer is connected with each of the metal plugs,

an interlayer insulation film is covered on the first metal conductorlayer,

a second metal conductor layer for the drain is connected in common witheach of the first metal conductor layers for the drain of the firstmetal conductor layers through the openings for the connection of draindisposed to the interlayer insulation film being situated on the metalplug connected with the drain region,

a second metal conductor layer for the source is connected in commonwith each of the first metal conductor layers for the source of thefirst metal conductor layers through the source connecting openingsdisposed to the interlayer insulation film,

a second metal conductor layer for the gate is connected in common witheach of the first metal conductor layers for the gate of the first metalconductor layers through the gate connecting openings disposed to theinterlayer insulation film,

the second metal conductor layer for the drain has a drain bonding pad,and

the second metal conductor layer for the gate has a gate bonding pad.

(55) In the constitution (54) described above, the semiconductor layeris formed on the surface of the semiconductor substrate and a sourceelectrode is disposed to the rearface of the semiconductor substrate.

(56) In the constitution (55) described above, a penetration layer of aconduction type identical with that the of the semiconductor layer andhaving a higher impurity concentration than that of the semiconductorlayer that extends to the semiconductor substrate is disposed in thesemiconductor layer, and the first metal conductor layer for the sourceis connected with the main surface of the penetration layer by way of ametal plug.(57) In the constitution (56) described above, the second metalconductor layer for the source is connected with the first metalconductor layer for the source through a source connecting openingdisposed to the interlayer insulation film situated on the metal plug.(58) In the constitution (56) described above, the second metalconductor layer for the source has a source pad for probing.(59) In the constitution (56) described above, an extension of thesecond metal conductor layer for the source is disposed adjacent withthe drain pad, other penetration layer having the same constitution asthe penetration layer described above is disposed in the semiconductorlayer being situated below the extension and the extension iselectrically connected with the other penetration layer.(60) In the constitution (56) described above, a second metal conductorlayer for the source different from the second metal conductor layer forthe source described above is disposed adjacent with the gate pad, otherpenetration layer having the same constitution as the penetration layerdescribed above is disposed being situated below the different secondmetal conductor layer for the source in the semiconductor layer, and thedifferent second metal conductor layer for the source is electricallyconnected with the other penetration layer.(61) In the constitution (59) described above, the first metal conductorlayer for the gate is disposed along the conductor layer for the gateelectrode,

the first metal conductor layer for the drain and the first conductorlayer for the source are disposed, respectively, along the first metalconductor layer for the gate,

the second metal conductor layer for the drain is disposed along thefirst metal conductor layer for the drain being situated on the firstmetal conductor layer for the drain, and

the second metal conductor layer for the source is disposed along thefirst metal conductor layer for the source being situated on the firstmetal conductor layer for the source.

(62) An insulated gate type semiconductor device having a plurality ofchannel regions, a drain region and a source region disposed on bothsides of each of the channel regions and a conductor layer for the gateelectrode disposed to the surface of each of the channel regions by wayof a gate insulation film to a main surface of a semiconductor chiphaving a semiconductor layer, and including insulated type field effecttransistors as a unit block, wherein

a metal plug is connected with the main surface of each of the drainregions and each of the source regions,

a first metal conductor layer is connected with each of metal plugs,

an interlayer insulation film is covered on the first metal conductorlayer,

a second metal conductor layer for the drain is connected in common witheach of the first metal conductor layers for the drain of the firstmetal conductor layers through drain connecting openings disposed to theinterlayer insulation film being situated on the metal plug connectedwith the drain region,

a second metal conductor layer for the source is connected in commonwith each of the first metal conductor layers for the source of thefirst metal conductor layers through source connecting openings disposedto the interlayer insulation film,

a second metal conductor layer for the gate is connected in common witheach of the first metal conductor layers for the gate of the first metalconductor layers through gate connecting openings disposed to theinterlayer insulation film,

the second metal conductor layer for the drain having a drain bondingpad and

the second metal conductor layer for the gate has a gate bonding pad,and wherein

the insulated gate type field effect transistors of the unit block aredisposed in plurality to the main surface of the semiconductor chip.

(63) In the constitution (62) described above, the semiconductor chiphas a first side and a second side opposed to each other, a plurality ofthe insulated gate type field effect transistors of the unit block aredisposed in parallel along the first side and the second side, drainbonding pads are disposed along the first side, and gate bonding padsare disposed along the second side.(64) In the constitution (63) described above, the second metalconductor layer for the source has a source pad for probing and sourcepad for probing in the unit block are disposed along the second side.(65) In the constitution (63) described above, gate protection devicesare connected electrically with the gate bonding pads disposed to theoutermost side respectively.(66) In the constitution (65) described above, a metal connection layeridentical with the first metal conductor layer is formed on the mainsurface of the semiconductor chip, and the gate protection device andthe bonding pad are connected by the metal connection layer.(67) An insulated gate type semiconductor device having a plurality ofchannel regions, a drain region and a source region disposed on bothsides of each of the channel regions, and a conductor layer for the gateelectrode disposed by way of a gate insulation film to the surface ofeach of the channel regions to a main surface of a semiconductor chiphaving a semiconductor layer, and including insulated gate type fieldeffect transistors as a unit block, wherein

metal plugs are connected with the main surface of each of the drainregions and each of the source regions,

a first metal conductor layer is connected with each of the metal plugs,

an interlayer insulation film is covered on the first metal conductorlayer,

a second metal conductor layer for the drain is connected in common witheach of the first metal conductor layers for the drain of the firstmetal conductor layers through drain connecting openings disposed in theinterlayer insulation film being situated on the metal plug connectedwith the drain region,

a second metal conductor layer for the source is connected in commonwith each of the first metal conductor layers for the source of thefirst metal conductor layers through source connecting openings disposedin the interlayer insulation film,

a second metal conductor layer for the gate is connected in common witheach of the first metal conductor layers for the gate of the first metalconductor layers through gate connecting openings disposed in theinterlayer insulation film,

the second metal conductor layer for the drain has a drain bonding pad,

the second metal conductor layer for the gate has a gate bonding pad,and wherein

the insulated gate type field effect transistors of the unit block aredisposed in plurality on the main surface of the semiconductorsubstrate, and

the first metal conductor layer for the gate and the second metalconductor layer for the gate are connected between each of the unitblocks.

(68) An insulated gate type semiconductor device having a plurality ofchannel regions, a drain region and a source region disposed on bothsides of each of the channel regions, and a conductor layer for the gateelectrode disposed by way of a gate insulation film to the surface ofeach of the channel regions to a main surface of a semiconductor chiphaving a semiconductor layer, wherein

metal plugs are connected to the main surface of each of the drainregions and each of the source regions,

a first metal conductor layer is connected with each of the metal plugs,

an interlayer insulation film is covered on the first metal conductorlayer,

a second metal conductor layer for the drain is connected in common witheach of the first metal conductor layers for the drain of the firstmetal conductor layers through drain connecting openings disposed in theinterlayer insulation film being situated on the metal plugs connectedwith the drain regions,

a second metal conductor layer for the gate is connected in common witheach of the first metal conductor layers for the gate of the first metalconductor layers through gate connecting openings disposed to theinterlayer insulation film,

the second metal conductor layer for the drain has a drain bonding pad,

the second metal conductor layer for the gate has a gate bonding pad,

the drain region is a common drain region put between the channelregions and

the conductor layers for the gate electrodes are disposed independentlyof each other.

(69) In the insulated gate type semiconductor device according to thisinvention, first and second insulated gate type field effect transistorseach having a plurality of channel regions, a drain region and a sourceregion disposed on both sides of each of the channel regions, and a gateelectrode disposed by way of a gate insulation film to the surface ofeach of the channel regions are disposed to the main surface of asemiconductor substrate having a semiconductor layer, a first resistorfor impedance matching is electrically connected with each of the drainregions of the first and second insulated gate type field effecttransistors and a second resistor for impedance matching is electricallyconnected with each of the conductor layers for the gate electrodes ofthe first and second insulated gate field effect transistors.(70) In the constitution (69) described above, the first and secondresistors comprise a material identical with that of the conductor layerfor the gate electrode.(71) In the constitution (69) described above, current sensing devicesconstituted in the same manner as the first and second insulate gatetype field effect transistors are disposed on the main surface ofsemiconductor substrate, and a shield layer is disposed between thefirst or the second insulated gate type field effect transistor and thecurrent sensing device.(72) In the constitution (71) described above, the shield layercomprises a semiconductor region extending from the main surface to thesemiconductor substrate, a metal plug connected with the semiconductorregion, a first metal conductor layer connected with the metal plug anda second metal conductor layer connected with the first metal conductorlayer.(73) In the insulated gate type semiconductor device according to thisinvention, first and second insulated gate type field effect transistorseach having a plurality of channel regions, a drain region and a sourceregion disposed on both sides of each of the channel regions, and aconductor layer for a gate electrode disposed by way of a gateinsulation film to the surface of each of the channel regions aredisposed to the main surface of a semiconductor substrate having asemiconductor layer, a drain bonding pad and a gate bonding pad to thefirst and second insulated gate type field effect transistors aredisposed respectively to the main surface, a source electrode isdisposed to the rearface of the semiconductor substrate and a shieldlayer is disposed between the first and second insulated gate type fieldeffect transistor.(74) In the constitution (73) described above, the shield layercomprises a semiconductor region extending from the main surface to thesemiconductor substrate, a metal plug connected with the semiconductorregion, a first metal conductor layer connected with the metal plug anda second metal conductor layer connected with the first metal conductorlayer.(75) In a method of manufacturing a semiconductor device comprising asemiconductor substrate of a first conduction type, a semiconductorlayer of a first conduction type formed to the upper surface of thesemiconductor substrate, a field insulation film formed for defining adevice forming region to the main surface of the semiconductor layer, afirst region and a second region of a second conduction type opposite tothe first conduction type situated, being spaced apart from each other,in the device forming region on both sides of a region to be formed witha channel, the second region comprising a low impurity concentrationregion in contact with a region to be formed with the channel and a highimpurity concentration region in contact with the low impurityconcentration region, and having a gate electrode formed by way of agate insulation film above the channel region, and a leach-through layerof a first conduction type formed in the device forming region so as tobe in contact with the first region and the semiconductor substrate, themethod comprises:

a step of introducing impurities for forming the leach-through layerselectively on the main surface of the semiconductor layer,

a step of forming the field insulation film selectively to the mainsurface of the semiconductor layer by thermal oxidation, and extendingthe impurities to form the leach-through layer in contact with thesemiconductor substrate,

a step of forming the gate insulation film to the surface of the deviceforming region defined by the field insulation film,

a step of forming the gate electrode on the gate insulation film andthen

a step of forming the first region and the second region in the deviceforming region.

(76) In the constitution (75) described above, the semiconductor layeris formed to a thickness of 2.5 μm or more and 3.5 μm or less.

(77) In the constitution (75) described above, impurities of a firstconduction type are introduced after the step of forming the fieldinsulation film, into the device forming region to form a well region asa region for forming the channel.

(78) In the constitution (77) described above, the introduction of theimpurities of the first conduction type is conducted by ion implantationfor two stages.

(79) In the constitution (75) described above, an annealing treatment isconducted after the step of forming the field insulation film and beforeforming the well.

(80) In the constitution (75) described above, the low impurityconcentration is formed by self alignment to the gate electrode.

(81) In the constitution (80) described above, the low impurityconcentration region is formed by a first ion implantation step ofintroducing impurities of the second conduction type in the deviceforming region and a second ion implantation step of introducingimpurities of the second conduction type at a concentration higher thanthat in the first ion implantation.(82) In the constitution (79) described above, the method includes

a step of forming a bird's beak oxide film by thermal oxidation situatedbelow and the gate electrode on the surface of the device forming regionto be formed with the low impurity concentration region after the stepof forming the gate electrode.

(83) In the constitution (82) described above, the gate electrodecomprises a polycrystal silicon layer in contact with the gateinsulation film, and the bird's beak oxide film is formed by thermallyoxidizing the end of the polycrystal silicon layer.

(84) In the constitution (75) described above, the method includes astep of forming the bird's beak oxide film by thermal oxidation on thesurface of the device forming region situated below both ends of thegate electrode after the step of forming the gate electrode.(85) In the constitution (84) described above, the gate electrodecomprises a polycrystal silicon layer in contact with the gateinsulation film and the bird's beak oxide film is formed by thermallyoxidizing the end of the polycrystal silicon layer.(86) In the constitution (75) described above, an oxynitride film isformed by a heat treatment in a nitrogen-containing oxygen atmosphere inthe step of forming the gate insulation film.(87) In the constitution (82) or (84) described above, the bird's beakoxide film is formed by thermal oxidation containing nitrogen.(88) In the constitution (82) or (84) described above, nitrogen ions areintroduced into the bird's beak oxide film by ion implantation afterforming the bird's beak oxide film.(89) The method of manufacturing a semiconductor device according tothis invention comprises:(a) a step of preparing a semiconductor substrate having a semiconductorlayer of a first conduction type at the main surface,(b) a step of introducing impurities of a first conduction typeselectively for forming a leach-through layer extending to thesemiconductor substrate on the main surface of the semiconductor layer,(c) a step of selectively forming a field insulation film for defining adevice forming region to the main surface of the semiconductor layer bythermal oxidation,(d) a step of forming a gate insulation film to the surface of thedevice forming region defined by the field insulation film,(e) a step of forming a gate electrode on the gate insulation film,(f) a step of forming an offset region of the first conduction type inself alignment to the gate electrode in the device forming region,(g) a step of forming a first region of a first conduction type selfaligned with the gate electrode, and forming a second region of a firstconduction type being spaced apart from the gate electrode end and beingin contact with the offset region and having an impurity concentrationhigher than that of the offset region, respectively, and, successively,(h) a step of forming a first insulation film so as to cover the deviceforming region,(i) a step of forming openings to the first insulation film for exposingthe main surfaces of the first region and the second region and theleach-through layer,(j) a step of forming first, second and third metal plugs connected withthe main surfaces of the first region and the second region and theleach-through layer, respectively, in the openings,(k) a step of forming a first conductor layer of connecting the firstmetal plug and the third metal plug to each other and forming a secondconductor layer for connection with the second metal plug, respectively,by patterning and(l) a step of forming a third conductor layer to the rearface of thesemiconductor substrate.(90) In the constitution (89) described above, the rearface of thesemiconductor substrate is grounded before the step (12) describedabove.(91) In the constitution (89) described above, the method comprises,succeeding to the step (12) described above:(m) a step of covering a second insulation film on the first conductorlayer and the second conductor layer and(n) a step of forming, to the second insulation film, a first openingand a second opening, respectively, being situated on the firstconductor plug and the second conductor plug, and(o) a step of forming a first wiring layer connected with the firstconductor layer through the first opening and forming a second wiringlayer connected with the second conductor layer, respectively, throughthe second opening, by patterning.(92) In the constitution (89) described above, the method comprises astep of introducing impurities of a first conduction type to form a wellregion prior to the step (e).(93) In the constitution (92) described above, the well forming step isconducted succeeding to the step (d).(94) In the constitution (94) or (93) described above, the well formingstep is conducted by ion implantation for two stages.(95) In the constitution (89) described above, the first insulation filmin the step (g) is a silicon nitride film.(96) In the constitution (92) described above, the method includes astep of ion implanting impurities of the first conduction type obliquelyrelative to the main surface of the device forming region in the wellregion after the step (e) thereby forming a buried region situated belowthe gate electrode.(97) In the constitution (96) described above,

the mask that has been used for forming the first region and the secondregion in the step (h) is used in the step of forming the buried region.

(98) In an insulated gate type semiconductor device according to thisinvention, an insulated gate type field effect transistor is formed onthe surface of a high resistance layer of a first conduction type formedon a low resistance semiconductor substrate of the identical firstconduction type, wherein

a low resistance source region of a second conduction type opposite tothe first conduction type is connected by way of a low resistance layerof the first conduction type formed in the high resistance layer withthe low resistance substrate, a low resistance drain region of a secondconduction type of the semiconductor device constitutes an offsetstructure spaced apart from the end of a gate electrode by way of a highresistor layer of the second conduction type, the length of the gateelectrode in the direction of the channel is 0.35 μm or less, thethickness of the gate oxide film is 10 nm or more and 12 nm or less, theoffset length of the drain region from the gate electrode end is 0.4 μmor more and 0.8 μm or less and the thickness of the high resistancelayer on the semiconductor substrate is 2.5 μm or more and 3.5 μm orless.

(99) In a high frequency module constituting an amplifier circuit with aplurality of semiconductor chips constituting insulated gate type fieldeffect transistors, each of the semiconductor chips includes aninsulated gate type field effect transistor as a unit block, eachcomprising

a plurality of channel regions a drain region and a source regiondisposed on both sides of each of the channel regions, and a conductorlayer for a gate electrode on the main surface of a semiconductorsubstrate having a semiconductor layer disposed by way of a gateinsulation film on the surface of each of the channel regions, in whichmetal plugs are connected to the main surfaces of each of the drainregions and each of the source regions, wherein

a first metal conductor layer is connected with each of the metal plugs,

an interlayer insulation film is covered on the first metal conductorlayer,

a second metal conductor layer for the drain is connected in common witheach of the first metal conductor layers for the drain of the firstmetal conductor layers through drain connection openings disposed to theinterlayer insulation film being situated on the metal plug connectedwith the drain region,

a second conductor layer for the source is connected in common with eachof the first metal conductor layers for the source of the first metalconductor layers through source connection openings disposed to theinterlayer insulation film,

a second conductor layer for the gate is connected in common with eachof the first metal conductor layers for the gate of the first metalconductor layers through gate connection openings disposed to theinterlayer insulation film,

the second metal conductor layer for the drain has a drain bonding pad,and

the second metal conductor layer for the gate has a gate bonding pad,and

the insulated gate type field effect transistors of the unit block aredisposed in plurality on the main surface of the semiconductor layer.

According to this invention, the power-added efficiency of the powerMOSFET used for portable telephone terminals such as on GSM, PCS, PDC orCDMA systems can be improved while ensuring the output power andbreakdown voltage. Then, in the module for the GSM system using thedevice, it is possible to attain an output power of 4 W and an overallefficiency of 55%. Further, the module mounting area can also bedecreased by miniaturization and integration of the chip.

Although the invention has been described in its preferred form with acertain degree of particularity, it is understood that the presentdisclosure of the preferred form has been changed in the details ofconstruction and the combination and arrangement of parts may beresorted to without departing from the spirit and the scope of theinvention as hereinafter claimed.

What is claimed is:
 1. A semiconductor device including a power MISFET,comprising: a semiconductor substrate; a gate insulating film of thepower MISFET formed over the semiconductor substrate; a gate electrodeof the power MISFET formed over the gate insulating film; a firstimpurity region of a first conductive type formed in the semiconductorsubstrate and formed at one side of the gate electrode; a secondimpurity region of the first conductive type formed in the semiconductorsubstrate and formed at the other side of the gate electrode; a channelregion of a second conductive type opposite to the first conductive typeformed in the semiconductor substrate, formed under the gate electrodeand formed between the first and second impurity regions; and an offsetregion of the first conductive type formed between the channel regionand the first impurity region and having lower impurity concentrationthan the first impurity region, wherein an interlayer insulating film isformed over the semiconductor substrate, wherein a first plug is formedin the interlayer insulating film and is connected with the firstimpurity region, wherein a second plug is formed in the interlayerinsulating film and is connected with the second impurity region,wherein a first wiring is formed over the interlayer insulating film andis connected with the first plug, wherein a second wiring is formed overthe interlayer insulating film and is connected with the second plug,wherein a field plate is formed over the interlayer insulating film andis arranged over the offset region in planar view, and wherein the fieldplate and the second wiring are electrically connected to each other andare formed in the same wiring layer.
 2. A semiconductor device accordingto the claim 1, wherein the field plate and the second wiring are formedas a unified structure.
 3. A semiconductor device according to the claim1, wherein the first impurity region is served as a drain region of thepower MISFET, and wherein the second impurity region is served as asource region of the power MISFET.
 4. A semiconductor device accordingto the claim 1, wherein the field plate is extended along a gate widthdirection.
 5. A semiconductor device according to the claim 1, whereineach of the field plate, the first wiring and the second wiring includesan aluminum film, and wherein each of the first and second plugsincludes a tungsten film.
 6. A semiconductor device according to theclaim 1, wherein the first conductive type is an n-type, and wherein thesecond conductive type is a p-type.